Charge transport in printed silicon nanoparticle networks

For the first time, the charge transport mechanisms in printed silicon nanoparticle networks have been comprehensively studied using variable temperature IV characteristics and Hall effect measurements, supported by microscopy studies. The conductivity can be described as hopping percolation in which activated charge transport is limited by band bending at the interface between particles and electron trapping at surface states. To probe the charge transport, two types of printed silicon nanoparticle networks based on milled silicon nanoparticles and highly doped p-type chemical vapour synthesised nanoparticles, were studied and compared.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2013

Author dc:creator

• Magunje, Batsirai,

Advisors dc:contributor.advisor

• Britton, David T
• Härting, Margit

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6524

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6524