Modelling of defect states in covalent amorphous solids

This study consists of the tight binding molecular dynamics simulations, of the bulk and defect structures, in hydrogenated amorphous silicon. Emphasis is given to the systematic analysis of the changes in the network structures, which occur due to the incorporation of hydrogen, at different levels of concentration. The atomic-level stress in the simulated structures is defined, in a manner that is consistent with the local structure. The concept of configurational landscapes is introduced, as a new analysis framework for the correlations between the stress fluctuations and the modifications of the local structure.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2008

Author dc:creator

• Ukpong, Aniekan Magnus

Advisors dc:contributor.advisor

• Britton, David T
• Härting, Margit

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6514

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6514