{"id":{"repo_id":"cape-town","oai_identifier":"oai:open.uct.ac.za:11427/17613"},"canonical_url":"https://search.dev.ndltd.org/etd/cape-town/oai:open.uct.ac.za:11427/17613","repository":{"repo_id":"cape-town","name":"University of Cape Town","base_url":"https://open.uct.ac.za/oai/request"},"display":{"title":"Broadband, low-noise and power microwave amplifiers","abstract":"The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation.","abstract_html":"The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation.","abstract_has_math":false,"creators":["Hall, Andrew D"],"institution":"Department of Electrical Engineering","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Downing, B J"],"committee_chairs":[],"committee_members":[],"year":1986,"date_issued":"1986","date_published":"1986","updated_at":"2026-07-22T22:22:55Z","subjects":[],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/11427/17613","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Downing, B J"]},{"key":"dc:creator","label":"Author","values":["Hall, Andrew D"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2016-03-10T06:53:27Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2016-03-10T06:53:27Z"]},{"key":"dc:date.issued","label":"Date","values":["1986"]},{"key":"dc:publisher.department","label":"Dc Publisher Department","values":["Department of Electrical Engineering"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Cape Town"]},{"key":"dc:type","label":"Dc Type","values":["Master Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Masters"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["MSc (Eng)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/11427/17613"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation."]},{"key":"dc:title","label":"Title","values":["Broadband, low-noise and power microwave amplifiers"]}]}],"canonical_facts":{"dc:contributor.advisor":["Downing, B J"],"dc:creator":["Hall, Andrew D"],"dc:date.accessioned":["2016-03-10T06:53:27Z"],"dc:date.available":["2016-03-10T06:53:27Z"],"dc:date.issued":["1986"],"dc:description.abstract":["The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation."],"dc:identifier.uri":["http://hdl.handle.net/11427/17613"],"dc:language.iso":["eng"],"dc:publisher.department":["Department of Electrical Engineering"],"dc:publisher.institution":["University of Cape Town"],"dc:title":["Broadband, low-noise and power microwave amplifiers"],"dc:type":["Master Thesis"],"dc:type.qualificationlevel":["Masters"],"dc:type.qualificationname":["MSc (Eng)"]},"updated_at":"2026-07-22T22:22:55Z"}