Laser induced epitaxy of Ni and Co silicides

Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> substrates. The best yield achieved for Co on <100> substrates is 35%. The formation of a non-equilibrium epitaxial monosilicide was also achieved. Numerical calculations based on a heat flow approach gave fair quantitative agreement with experiment.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

1995

Author dc:creator

• Schroeder, Brett Robert

Advisor dc:contributor.advisor

• Comrie, Craig M

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/16013

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/16013