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University of Cambridge

Influence of van der Waals interfaces on electrical and optical properties of two-dimensional materials

Abstract

dc:description.abstract

The interactions between two-dimensional (2D) materials and surrounding surfaces are critical for electronic devices. Interfacial effects become increasingly important as electronic devices continue to shrink in size. This thesis investigates the influence of van der Waals (vdW) interfaces on electrical and optical properties of 2D materials. I began by studying the nucleation and growth of indium and gold metal films on 2D materials such as molybdenum disulfide (MoS2) and graphene. Indium and gold metal films were chosen because previous research in the group has demonstrated that indium forms vdW interfaces with 2D materials while gold forms defective non-vdW interfaces. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) results show that indium metal deposition on MoS2 and graphene follows a 2D growth mechanism to form large grains. The layer-dependent study of MoS2 and graphene shows that increasing the number of layers reduces the influence of SiO2 substrate roughness so that the diffusivity and diffusion length of indium atoms increase and the activation energy for indium atom diffusion decreases - as reflected in the fivefold decrease in nucleation density (~12 μm-2 ). The influence of vdW interface between graphene and ferroelectric CuInP2S6 (CIPS) was also explored. Graphene field effect transistors (FETs) with CIPS as the top gate were studied. Polarisation-induced hysteresis in CIPS-gated graphene FETs was observed – indicating the realisation of ferroelectric FETs (FeFETs). We show that interfacial remote doping influences the macroscopic polarisation and performance of CIPS-based graphene FeFETs. Finally, Raman and photoluminescence (PL) measurements on MoS2 with indium metal film of thicknesses ranging from 2 to 25 nm were performed. The results suggest that the vdW gap between indium and MoS2 leads to a strong enhancement of Raman and PL signals. Strong Raman enhancement was also observed in graphene. In the absence of vdW gap with gold film, the plasmon-mediated enhancement of Raman and PL signals was not observed.

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel
Doctoral
Grantor dc:publisher.institution
University of Cambridge
Year dc:date.issued
2025

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Ghani, Maheera Abdul
Advisor dc:contributor.advisor
  • Chhowalla, Manish

Subjects

dc:subject × 8

Rights

dc:rights
Language dc:language
eng

Identifiers

dc:identifier.*
DOI dc:identifier.doi
https://doi.org/10.17863/CAM.121354
OAI identifier oai:identifier
oai:www.repository.cam.ac.uk:1810/389492

Chain of custody

source
Harvested from
Cambridge University
Base URL
api.repository.cam.ac.uk/server/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Ghani, Maheera Abdul. Influence of van der Waals interfaces on electrical and optical properties of two-dimensional materials. Doctoral thesis, University of Cambridge, 2025. https://doi.org/10.17863/CAM.121354