In-situ plasmon-enhanced characterization of optically accessible ultra-thin film ferroelectric devices
type: CreativeWork
description: This PhD thesis presents novel nanoscale characterisation techniques and probes for optoelectronic analysis of ultra-thin film ferroelectric (FE) devices, which overcome the drawbacks of contemporary investigation methods such as their destructive nature, lack of precision, or in certain techniques the requirement for a vacuum environment. We show the use of a innovative nanoparticle-on-mirror (NPoM) technique that uses gold nanoparticles as electrical contacts, providing both nano-sized electrodes and substantial optical enhancement in the biased region. This allows for the first accurate and non-invasive simultaneous optical and electrical evaluation of nanomaterials. This thesis majorly concentrates on Hafnium oxide based ferroelectric and memristive materials due to their significant advantages in power consumption, high read-write speed and a well-established CMOS-compatibility compared to other non-volatile memories (NVMs). This thesis also introduces a unique characterization approach called scanning plasmon-enhanced microscopy, which addresses many issues in the current plasmon-enhanced optical characterization of ultra-thin films and two-dimensional materials. Chapter 1, Introduction, delineates the motivation for this study and provides a concise overview of the Nanoparticle-on-mirror approach used for nanoscale characterisation in this research. Chapter 2, Ferroelectricity and FeRAMs, presents the theory of ferroelectricity, emphasizing on Hafnium Oxide as a ferroelectric material. Chapter 3, Experimental Methods, describes the optical and electrical setup utilized in experiments. Scanning plasmon-enhanced microscopy for simultaneous opto-electrical characterization, a scanning plasmonic imaging method using an optically transparent and conductive plasmonic nanoprobe that conducts through a single gold nanoparticle is introduced and verified on MoS2. In chapter 4, Evidence of vacancy migration assisted phase change in FE memories, this study shows the opt…
abstract: This PhD thesis presents novel nanoscale characterisation techniques and probes for optoelectronic analysis of ultra-thin film ferroelectric (FE) devices, which overcome the drawbacks of contemporary investigation methods such as their destructive nature, lack of precision, or in certain techniques the requirement for a vacuum environment. We show the use of a innovative nanoparticle-on-mirror (NPoM) technique that uses gold nanoparticles as electrical contacts, providing both nano-sized electrodes and substantial optical enhancement in the biased region. This allows for the first accurate and non-invasive simultaneous optical and electrical evaluation of nanomaterials. This thesis majorly concentrates on Hafnium oxide based ferroelectric and memristive materials due to their significant advantages in power consumption, high read-write speed and a well-established CMOS-compatibility compared to other non-volatile memories (NVMs). This thesis also introduces a unique characterization approach called scanning plasmon-enhanced microscopy, which addresses many issues in the current plasmon-enhanced optical characterization of ultra-thin films and two-dimensional materials. Chapter 1, Introduction, delineates the motivation for this study and provides a concise overview of the Nanoparticle-on-mirror approach used for nanoscale characterisation in this research. Chapter 2, Ferroelectricity and FeRAMs, presents the theory of ferroelectricity, emphasizing on Hafnium Oxide as a ferroelectric material. Chapter 3, Experimental Methods, describes the optical and electrical setup utilized in experiments. Scanning plasmon-enhanced microscopy for simultaneous opto-electrical characterization, a scanning plasmonic imaging method using an optically transparent and conductive plasmonic nanoprobe that conducts through a single gold nanoparticle is introduced and verified on MoS2. In chapter 4, Evidence of vacancy migration assisted phase change in FE memories, this study shows the opt…
author: Jan, Atif
language: eng
keywords: Electronic Devices, Optical spectrosccopy, Non-volatile ferroelectric memories, In-situ opto-electronic
license: https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/f238204c-8678-41ae-b1ff-d2198b264514/download
license: http://purl.org/NET/rdflicense/allrightsreserved
date published: 2024-11-25
date modified: 2026-07-22T22:24:24Z
provider: Cambridge University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Cambridge

PropertyValue
property ID: DOI
value: 10.17863/CAM.116533