Charge transport mechanism within 2D material films and its role on field effect transistor and capacitor technology
type: CreativeWork
description: Graphene and other layered materials such as transition metal dichalcogenides (TMDs) and MXenes have opened up a plethora of untapped potential for better device architectures and performance. One of the areas where 2D materials are regarded as disruptive technology is field-effect transistors (FETs), where 2D materials can offer high field-effect mobility (μFE ) and faster switching time. Moreover, the solution processability of 2D materials has enabled their usage as inks in large-scale printing processes. Thus, due to the economy of scale, 2D material device manufacturing has become competitive and attractive for commercialisation. However, significant hurdles, such as reproducibility in device performance, need to be addressed. In this thesis, ink formulations optimised for making textile capacitors and inkjet printed FETs are outlined. Initially, the devices’ inks were produced via liquid exfoliation (ultrasonic and electrochemical exfoliation). The 2D material inks were then coated on a desired substrate via either dip coating (textile capacitor) or inkjet printing. Subsequently, a variety of characterisation techniques were employed to understand the 2D material inks properties. For instance, XPS and Raman spectroscopy was used to understand the structural integrity of 2D material flakes. Raman data on the graphene flakes used in this thesis showed a characteristic peak at 1580 cm−1 (E2g) which is indicative of pristine few layer graphene flakes. In addition, XPS data on the MoS2 flakes provided conclusive evidence for the presence of 2H MoS2 which is a semiconductor, thus, has the potential to be used as a channel material in transistor. The solid state textile capacitor outlined in this thesis had a capacitance of ∼ 26 pF cm−2 which is comparable to other textile capacitor present in literature (∼ 50 pF cm−2). The textile capacitor also retained its energy storing capability when bent (bending radius ∼ 2.5 cm) with the C C0 only changing by 0.5%. Moreover, …
abstract: Graphene and other layered materials such as transition metal dichalcogenides (TMDs) and MXenes have opened up a plethora of untapped potential for better device architectures and performance. One of the areas where 2D materials are regarded as disruptive technology is field-effect transistors (FETs), where 2D materials can offer high field-effect mobility (μFE ) and faster switching time. Moreover, the solution processability of 2D materials has enabled their usage as inks in large-scale printing processes. Thus, due to the economy of scale, 2D material device manufacturing has become competitive and attractive for commercialisation. However, significant hurdles, such as reproducibility in device performance, need to be addressed. In this thesis, ink formulations optimised for making textile capacitors and inkjet printed FETs are outlined. Initially, the devices’ inks were produced via liquid exfoliation (ultrasonic and electrochemical exfoliation). The 2D material inks were then coated on a desired substrate via either dip coating (textile capacitor) or inkjet printing. Subsequently, a variety of characterisation techniques were employed to understand the 2D material inks properties. For instance, XPS and Raman spectroscopy was used to understand the structural integrity of 2D material flakes. Raman data on the graphene flakes used in this thesis showed a characteristic peak at 1580 cm−1 (E2g) which is indicative of pristine few layer graphene flakes. In addition, XPS data on the MoS2 flakes provided conclusive evidence for the presence of 2H MoS2 which is a semiconductor, thus, has the potential to be used as a channel material in transistor. The solid state textile capacitor outlined in this thesis had a capacitance of ∼ 26 pF cm−2 which is comparable to other textile capacitor present in literature (∼ 50 pF cm−2). The textile capacitor also retained its energy storing capability when bent (bending radius ∼ 2.5 cm) with the C C0 only changing by 0.5%. Moreover, …
author: Arbab, Adrees
language: eng
keywords: 2-dimensional materials, field effect transistor, Graphene, Molybdenum disulfide, transition metal dichalcogenides
license: https://www.rioxx.net/licenses/all-rights-reserved/
date published: 2023-03-01
date modified: 2026-07-22T22:24:21Z
provider: Cambridge University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Cambridge

PropertyValue
property ID: DOI
value: 10.17863/CAM.94684