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University of Cambridge

Quantum transport in gapped graphene

Abstract

dc:description.abstract

This thesis focuses on investigating local and nonlocal transport properties in hexagonal boron nitride (hBN)/graphene superlattice Hall bars and graphene Hall bars proximity coupled to the ferrimagnetic insulator yttrium iron garnet (\text{Y}3\text{Fe}5\text{O}12 or YIG). The first part describes in detail the pulse laser deposition of atomically flat YIG thin films onto single crystal gadolinium gallium garnet with a magnetization of 144 emu cm-3. This part also outlines device fabrication procedures including graphene exfoliation and dry transfer, electron beam lithography and metallization of side-contacts, and finally the electrical setup for measuring local and nonlocal transport in graphene. The second part investigates transport properties in hBN/graphene/hBN superlattice Hall bars with a field-effect mobility of up to 220,000 cm2 V-1 s-1 at 9 K with low charge impurities. By aligning hBN and graphene, a ∼33.7 meV band gap at 9 K is demonstrated at the primary Dirac point in zero magnetic field. Furthermore, the nonlocal resistances approach h/2e2, where $h$ is Planck’s constant and e is the electron charge. Nonlocal measurements demonstrate that, below 60 K a spin-degenerate ballistic counter-propagating edge state forms and dominates with a possible secondary contribution from a network of one-dimensional conducting channels with soliton-like domain walls. The spin-degenerate ballistic edge states offer possibilities for electronic applications beyond quantum spin and anomalous Hall effects since a quantized resistance is observed through valley coupling. The third part reports a proximity-induced magnetic exchange field in graphene of the order 60 T by placing graphene on the ferrimagnetic insulator YIG. From electrical transport measurements, the magnetic order and energy gap of the edge modes in graphene are tunable, and a transition between the canted antiferromagnetic and spin-polarized ferromagnetic $ν = 0$ quantum Hall states can be achieved with relatively low magnetic fields ($> 6$ T) at 2.7 K. The fourth part summarizes the key results of the thesis.

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel
Doctoral
Grantor dc:publisher.institution
University of Cambridge
Year dc:date.issued
2020

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Li, Yang
Advisor dc:contributor.advisor
  • Robinson, Jason

Subjects

dc:subject × 5

Rights

dc:rights
Language dc:language
en

Identifiers

dc:identifier.*
DOI dc:identifier.doi
https://doi.org/10.17863/CAM.48578
OAI identifier oai:identifier
oai:www.repository.cam.ac.uk:1810/301509

Chain of custody

source
Harvested from
Cambridge University
Base URL
api.repository.cam.ac.uk/server/oai/request
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Li, Yang. Quantum transport in gapped graphene. Doctoral thesis, University of Cambridge, 2020. https://doi.org/10.17863/CAM.48578