Investigating electron transport in chemical vapor deposition graphene nanostructures
type: CreativeWork
description: This thesis investigates electron transport properties in chemical vapor deposition (CVD) graphene-related nanostructures. There are many potential electronic and optoelectronic applications envisioned for graphene, due to its two-dimensional character and exceptional properties. However, the lack of scalability of exfoliated graphene and the high cost of epitaxial graphene on silicon carbide remain the major obstacles for further commercialization of graphene devices. Different approaches to solve this problem have been proposed for different applications and graphene grown by CVD stands out as a useful alternative and proves to be one of the viable routes towards scalable high quality electronics. This thesis presents a study of scalable nanostructured devices based on CVD graphene, with the purpose of understanding the quantum physics of electron transport and demonstrating the potential for nano-electronic applications. First, this thesis demonstrates a scalable approach towards encapsulating and passivating high quality CVD graphene field effect transistors (FETs), and electron scattering processes are explored by studying electrical characterisation and magnetotransport phenomena in encapsulated CVD AB stack and large twist angle (30◦) bilayer graphene FETs, as well as monolayer graphene FETs for reference. The result has significant impact on the widespread implementation of graphene for its scalable device applications. Second, in order to enhance spin-orbit coupling (SOC) in graphene for spin transport study and spintronics applications, a graphene - transition metal dichalcogenide (TMD) heterostructure is investigated. Phase coherence length is reduced in the heterostructure and a special transition from weak localization (WL) to weak antilocalization (WAL) is found around a certain carrier concentration due to surface roughness induced patches. This result provides insight into fabrication and operation of scalable graphene spintronic devices. Moreover, t…
abstract: This thesis investigates electron transport properties in chemical vapor deposition (CVD) graphene-related nanostructures. There are many potential electronic and optoelectronic applications envisioned for graphene, due to its two-dimensional character and exceptional properties. However, the lack of scalability of exfoliated graphene and the high cost of epitaxial graphene on silicon carbide remain the major obstacles for further commercialization of graphene devices. Different approaches to solve this problem have been proposed for different applications and graphene grown by CVD stands out as a useful alternative and proves to be one of the viable routes towards scalable high quality electronics. This thesis presents a study of scalable nanostructured devices based on CVD graphene, with the purpose of understanding the quantum physics of electron transport and demonstrating the potential for nano-electronic applications. First, this thesis demonstrates a scalable approach towards encapsulating and passivating high quality CVD graphene field effect transistors (FETs), and electron scattering processes are explored by studying electrical characterisation and magnetotransport phenomena in encapsulated CVD AB stack and large twist angle (30◦) bilayer graphene FETs, as well as monolayer graphene FETs for reference. The result has significant impact on the widespread implementation of graphene for its scalable device applications. Second, in order to enhance spin-orbit coupling (SOC) in graphene for spin transport study and spintronics applications, a graphene - transition metal dichalcogenide (TMD) heterostructure is investigated. Phase coherence length is reduced in the heterostructure and a special transition from weak localization (WL) to weak antilocalization (WAL) is found around a certain carrier concentration due to surface roughness induced patches. This result provides insight into fabrication and operation of scalable graphene spintronic devices. Moreover, t…
author: Sui, Jinggao
language: en
keywords: graphene, chemical vapor deposition, nanostructure, Hall bar, antidots, radio-frequency reflectometry, quantum Hall effect, weak localization
license: https://www.repository.cam.ac.uk/bitstreams/471ce97c-2ebd-4885-8e90-d74e4fec410d/download
license: https://www.rioxx.net/licenses/all-rights-reserved/
date published: 2019-12-01
date modified: 2026-07-24T01:33:23Z
provider: Cambridge University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Cambridge

PropertyValue
property ID: DOI
value: 10.17863/CAM.46315