{"id":{"repo_id":"cambridge","oai_identifier":"oai:www.repository.cam.ac.uk:1810/290544"},"canonical_url":"https://search.dev.ndltd.org/etd/cambridge/oai:www.repository.cam.ac.uk:1810/290544","repository":{"repo_id":"cambridge","name":"Cambridge University","base_url":"https://api.repository.cam.ac.uk/server/oai/request"},"display":{"title":"Microscopy and Spectroscopy of Materials for Blue Single Photon Sources","abstract":"Semiconductor quantum dots (QDs) have shown much interest in recent years as potential single photon emitters. The InGaN-GaN system in particular offers comparably high temperature emission, polarised emission, and access to the green and blue regions. This has the advantages of completing the visible spectrum, and being the region in which ultrafast single photon detectors display the greatest sensitivity. This thesis uses microscopy techniques to investigate the methods by which such QDs can be grown and incorporated into device structures, and finally measures the single photon emission via photoluminescence spectroscopy. This study investigates two methods by which self-assembled quantum dots can be grown: modified droplet epitaxy and via growth of InGaN islands. It is hoped that gaining a deeper understanding of the growth processes and structural evolution upon capping will allow us to have greater control over dot size, geometry and density during growth. Furthermore, it presents a study on the incorporation of these dots in recently developed mesoporous distributed Bragg reflectors, which boast perfect lattice matching and a facile fabrication method. Microscopy analysis provides insight into the method of etching along dislocation channels, and the changing morphology of the layer stack. Furthermore, it provides insight into the etching of the QD layer itself. Spectroscopy analysis was thus performed to ascertain the effect of porosification on the emission properties. This study provides the first evidence of a working quantum porous device in the GaN system, and reports single photon emission with a g$^{(2)}$(0) value of 0.126 $\\pm \\space$ 0.003 through optimisation of excitation conditions. Furthermore, a recorded value for the fast timescale spectral diffusion much longer than the radiative lifetime of a dot provides a promising step towards the realisation of indistinguishable single photons.","abstract_html":"Semiconductor quantum dots (QDs) have shown much interest in recent years as potential single photon emitters. The InGaN-GaN system in particular offers comparably high temperature emission, polarised emission, and access to the green and blue regions. This has the advantages of completing the visible spectrum, and being the region in which ultrafast single photon detectors display the greatest sensitivity. This thesis uses microscopy techniques to investigate the methods by which such QDs can be grown and incorporated into device structures, and finally measures the single photon emission via photoluminescence spectroscopy. This study investigates two methods by which self-assembled quantum dots can be grown: modified droplet epitaxy and via growth of InGaN islands. It is hoped that gaining a deeper understanding of the growth processes and structural evolution upon capping will allow us to have greater control over dot size, geometry and density during growth. Furthermore, it presents a study on the incorporation of these dots in recently developed mesoporous distributed Bragg reflectors, which boast perfect lattice matching and a facile fabrication method. Microscopy analysis provides insight into the method of etching along dislocation channels, and the changing morphology of the layer stack. Furthermore, it provides insight into the etching of the QD layer itself. Spectroscopy analysis was thus performed to ascertain the effect of porosification on the emission properties. This study provides the first evidence of a working quantum porous device in the GaN system, and reports single photon emission with a g<span class=\"etd-inline-math\"><sup>(2)</sup></span>(0) value of 0.126 $\\pm \\space$ 0.003 through optimisation of excitation conditions. Furthermore, a recorded value for the fast timescale spectral diffusion much longer than the radiative lifetime of a dot provides a promising step towards the realisation of indistinguishable single photons.","abstract_has_math":true,"creators":["Springbett, Helen Phoebe"],"institution":"University of Cambridge","degree_name":"Doctor of Philosophy (PhD)","degree_level":"Doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Oliver, Rachel Angharad"],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-04-27","date_published":"2019-04-27","updated_at":"2026-07-22T22:24:14Z","subjects":["quantum dots","gallium nitride","semiconductor","single photon sources","photon","microscopy","electron microscopy","spectroscopy"],"languages":["en"],"rights":[],"rights_urls":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/60d59125-fac3-45fa-b3ea-0ec79a61b2ef/download","https://www.rioxx.net/licenses/all-rights-reserved/"],"identifier_entries":[]},"links":{"outbound_url":"https://doi.org/10.17863/CAM.37772","outbound_label":"DOI","outbound_source":"dc:identifier.doi"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Oliver, Rachel Angharad"]},{"key":"dc:contributor.sponsor","label":"Sponsor","values":["This work was funded by an EPSRC PhD Studentship and a JSPS Summer Programme Fellowship"]},{"key":"dc:creator","label":"Author","values":["Springbett, Helen Phoebe"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2019-04-27"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Cambridge"]},{"key":"dc:relation.isreferencedby.uri","label":"Dc Relation Isreferencedby URI","values":["https://www.repository.cam.ac.uk/handle/1810/290544"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Doctoral"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["Doctor of Philosophy (PhD)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["quantum dots","gallium nitride","semiconductor","single photon sources","photon","microscopy","electron microscopy","spectroscopy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/60d59125-fac3-45fa-b3ea-0ec79a61b2ef/download","https://www.rioxx.net/licenses/all-rights-reserved/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["10.17863/CAM.37772"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/5c15d06c-63cd-4411-b731-fa36e3795c95/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Semiconductor quantum dots (QDs) have shown much interest in recent years as potential single photon emitters. 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Furthermore, it presents a study on the incorporation of these dots in recently developed mesoporous distributed Bragg reflectors, which boast perfect lattice matching and a facile fabrication method. Microscopy analysis provides insight into the method of etching along dislocation channels, and the changing morphology of the layer stack. Furthermore, it provides insight into the etching of the QD layer itself. Spectroscopy analysis was thus performed to ascertain the effect of porosification on the emission properties. This study provides the first evidence of a working quantum porous device in the GaN system, and reports single photon emission with a g$^{(2)}$(0) value of 0.126 $\\pm \\space$ 0.003 through optimisation of excitation conditions. 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Furthermore, it presents a study on the incorporation of these dots in recently developed mesoporous distributed Bragg reflectors, which boast perfect lattice matching and a facile fabrication method. Microscopy analysis provides insight into the method of etching along dislocation channels, and the changing morphology of the layer stack. Furthermore, it provides insight into the etching of the QD layer itself. Spectroscopy analysis was thus performed to ascertain the effect of porosification on the emission properties. This study provides the first evidence of a working quantum porous device in the GaN system, and reports single photon emission with a g$^{(2)}$(0) value of 0.126 $\\pm \\space$ 0.003 through optimisation of excitation conditions. 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