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University of Cambridge

Charge Carrier Relaxation in Halide Perovskite Semiconductors for Optoelectronic Applications

Abstract

dc:description.abstract

Lead halide perovskites have shown remarkable device performance in both solar cells and LEDs. Whilst the research efforts so far have been mainly focussed on device optimisation, little is known about the photophysical properties. For example, the nature of the bandgap is still debated and an indirect bandgap due to a Rashba splitting has been suggested. In this thesis, we study the early-time carrier relaxation and its impact on photoluminescence emission. We first study ultrafast carrier thermalization processes using 2D electronic spectroscopy and extract characteristic carrier thermalization times from below 10 fs to 85 fs. We then investigate the early-time photoluminescence emission during carrier cooling. We observe that the luminescence signal shows a rise over 2 picoseconds in CH3NH3PbI3 while carriers cool to the band edge. This shows that luminescence of hot carriers is slower than that of cold carriers, as is found in direct gap semiconductors. We conclude that electrons and holes show strong overlap in momentum space, despite the potential presence of a small band offset arising from a Rashba effect. Recombination and device performance of perovskites are thus better described within a direct bandgap model. We finally study carrier recombination in perovskites and the impact of photon recycling. We show that, for an internal photoluminescence quantum yield of 70%, we measure external yields as low as 15% in planar films, where light out-coupling is inefficient, but observe values as high as 57% in films on textured substrates that enhance out-coupling. We study the photo-excited carrier dynamics and use a rate equation to relate radiative and non-radiative recombination events to measured photoluminescence efficiencies. We conclude that the use of textured active layers has the ability to improve power conversion efficiencies for both LEDs and solar cells.

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel
Doctoral
Grantor dc:publisher.institution
University of Cambridge
Year dc:date.issued
2018

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Richter, Johannes Martin
Advisor dc:contributor.advisor
  • Friend, Richard Henry

Subjects

dc:subject × 12

Rights

dc:rights
Language dc:language
en

Identifiers

dc:identifier.*
DOI dc:identifier.doi
https://doi.org/10.17863/CAM.22811
OAI identifier oai:identifier
oai:www.repository.cam.ac.uk:1810/275568

Chain of custody

source
Harvested from
Cambridge University
Base URL
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Last updated
2026-07-22
Source record
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citation

Richter, Johannes Martin. Charge Carrier Relaxation in Halide Perovskite Semiconductors for Optoelectronic Applications. Doctoral thesis, University of Cambridge, 2018. https://doi.org/10.17863/CAM.22811