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University of Cambridge

High-pressure states of bismuth

Abstract

dc:description.abstract

Bismuth is among the most studied of all elements, but its behaviour under pressure exhibits myriad unexpected puzzles even after many decades of research. Bismuth narrowly avoids being an insulator: a Peierls-type distortion almost completely gaps the electronic energy bands, producing a rhombohedral metal with a tiny overlap of conduction and valence bands. The resulting solitary free electron per 100,000 atoms can travel large distances in high-purity crystals, leading to a host of unusual properties. We show that the rhombohedral structure can be tuned with pressure, driving the carrier concentration to nearly zero. We compare our measurements to recent experimental advances implying the formation of novel electronic order driven by the pairing of low-density electrons and holes, and show evidence for a previously unseen phase at very low temperatures in the semiconducting state. We also present a method for calculating the carrier density and resistivity as a function of pressure, based on phenomenological band parameters and a simple charge-balance argument, and demonstrate that this approach can quite well describe most - but not all - of the observed behaviour of the resistivity. At higher pressures, bismuth undergoes a transition into a quasiperiodic host-guest structure. Here, two distinct crystal lattices coexist and interpenetrate, but the lattice parameters are incommensurate. This crystal thus lacks a single unit cell - an unexpected complexity for a simple element. The discovery of such unusual structures in elements is a new phenomenon and their physical properties are rather unexplored. We present experimental measurements of the resistivity and magnetic susceptibility in the incommensurate host-guest state. We argue that the experimental data (in particular, the shape of the normal-state electrical resistivity, and the high value of the low-temperature upper critical field) may be evidence for strong electron-phonon coupling. This strong coupling is consistent with theoretical predictions which suggest the presence of a low-energy phonon mode arising due to the vanishing energy cost of moving guest atoms through the host lattice.

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel
Doctoral
Grantor dc:publisher.institution
University of Cambridge
Year dc:date.issued
2017

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Brown, Philip
Advisor dc:contributor.advisor
  • Grosche, Malte

Subjects

dc:subject × 3

Rights

dc:rights
Language dc:language
en

Identifiers

dc:identifier.*
DOI dc:identifier.doi
https://doi.org/10.17863/CAM.16819
OAI identifier oai:identifier
oai:www.repository.cam.ac.uk:1810/269971

Chain of custody

source
Harvested from
Cambridge University
Base URL
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Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Brown, Philip. High-pressure states of bismuth. Doctoral thesis, University of Cambridge, 2017. https://doi.org/10.17863/CAM.16819