{"id":{"repo_id":"cambridge","oai_identifier":"oai:www.repository.cam.ac.uk:1810/265543"},"canonical_url":"https://search.dev.ndltd.org/etd/cambridge/oai:www.repository.cam.ac.uk:1810/265543","repository":{"repo_id":"cambridge","name":"Cambridge University","base_url":"https://api.repository.cam.ac.uk/server/oai/request"},"display":{"title":"Magnetically controlled chemical potential in field effect devices","abstract":"In this thesis I describe a sensitive technique for quantifying the chemical potential anisotropy of magnetically ordered and spin-orbit coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\\1no.o6As. The conductance variation of the SET provides a direct probe of the magnetisation-dependent change in the chemical potential of the magnetic gate with ?eV resolution. The control of the SET conductance by the magnetisation direction of the gate opens the way to a new recording mechanism. Achieving the same control in a semiconductor device represents a first step towards possible applications in computer memories. In the second part of my work I present the measurements on a CoPt gated metal-oxide-semiconductor� field effect transistor. In the last part of my thesis, I present a study of the response of a metal SET to a radio-frequency perturbation, which showed the conditions of maximum sensitivity and set a lower limit to the detection bandwidth of the SET. This study is important for assessing the performance of a prototypical device for detecting fast magnetisation switching or for quantifying the chemical potential anisotropy of magnetic nano-structures that cannot be electrically connected to an electrode, but that are still expected to have interesting anisotropic properties","abstract_html":"In this thesis I describe a sensitive technique for quantifying the chemical potential anisotropy of magnetically ordered and spin-orbit coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\\1no.o6As. The conductance variation of the SET provides a direct probe of the magnetisation-dependent change in the chemical potential of the magnetic gate with ?eV resolution. The control of the SET conductance by the magnetisation direction of the gate opens the way to a new recording mechanism. Achieving the same control in a semiconductor device represents a first step towards possible applications in computer memories. In the second part of my work I present the measurements on a CoPt gated metal-oxide-semiconductor� field effect transistor. In the last part of my thesis, I present a study of the response of a metal SET to a radio-frequency perturbation, which showed the conditions of maximum sensitivity and set a lower limit to the detection bandwidth of the SET. This study is important for assessing the performance of a prototypical device for detecting fast magnetisation switching or for quantifying the chemical potential anisotropy of magnetic nano-structures that cannot be electrically connected to an electrode, but that are still expected to have interesting anisotropic properties","abstract_has_math":false,"creators":["Ciccarelli, Chiara"],"institution":"University of Cambridge","degree_name":"Doctor of Philosophy (PhD)","degree_level":"Doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-10-09","date_published":"2012-10-09","updated_at":"2026-07-22T22:24:03Z","subjects":[],"languages":["eng"],"rights":[],"rights_urls":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/42cbb42f-6f71-46d7-8f1a-cf81ce420c3b/download","https://www.rioxx.net/licenses/all-rights-reserved/"],"identifier_entries":[]},"links":{"outbound_url":"https://doi.org/10.17863/CAM.11721","outbound_label":"DOI","outbound_source":"dc:identifier.doi"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Ciccarelli, Chiara"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2012-10-09"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Cambridge"]},{"key":"dc:relation.isreferencedby.uri","label":"Dc Relation Isreferencedby URI","values":["https://www.repository.cam.ac.uk/handle/1810/265543"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Doctoral"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["Doctor of Philosophy (PhD)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/42cbb42f-6f71-46d7-8f1a-cf81ce420c3b/download","https://www.rioxx.net/licenses/all-rights-reserved/"]},{"key":"dc:rights.embargotype","label":"Dc Rights Embargotype","values":["controlled.access"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["10.17863/CAM.11721"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this thesis I describe a sensitive technique for quantifying the chemical potential anisotropy of magnetically ordered and spin-orbit coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\\1no.o6As. The conductance variation of the SET provides a direct probe of the magnetisation-dependent change in the chemical potential of the magnetic gate with ?eV resolution. The control of the SET conductance by the magnetisation direction of the gate opens the way to a new recording mechanism. Achieving the same control in a semiconductor device represents a first step towards possible applications in computer memories. In the second part of my work I present the measurements on a CoPt gated metal-oxide-semiconductor� field effect transistor. In the last part of my thesis, I present a study of the response of a metal SET to a radio-frequency perturbation, which showed the conditions of maximum sensitivity and set a lower limit to the detection bandwidth of the SET. This study is important for assessing the performance of a prototypical device for detecting fast magnetisation switching or for quantifying the chemical potential anisotropy of magnetic nano-structures that cannot be electrically connected to an electrode, but that are still expected to have interesting anisotropic properties"]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["87eda9de84448d1f82354d60eee3eb5f"]},{"key":"dc:title","label":"Title","values":["Magnetically controlled chemical potential in field effect devices"]}]}],"canonical_facts":{"dc:creator":["Ciccarelli, Chiara"],"dc:date.issued":["2012-10-09"],"dc:description.abstract":["In this thesis I describe a sensitive technique for quantifying the chemical potential anisotropy of magnetically ordered and spin-orbit coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\\1no.o6As. The conductance variation of the SET provides a direct probe of the magnetisation-dependent change in the chemical potential of the magnetic gate with ?eV resolution. The control of the SET conductance by the magnetisation direction of the gate opens the way to a new recording mechanism. Achieving the same control in a semiconductor device represents a first step towards possible applications in computer memories. In the second part of my work I present the measurements on a CoPt gated metal-oxide-semiconductor� field effect transistor. In the last part of my thesis, I present a study of the response of a metal SET to a radio-frequency perturbation, which showed the conditions of maximum sensitivity and set a lower limit to the detection bandwidth of the SET. This study is important for assessing the performance of a prototypical device for detecting fast magnetisation switching or for quantifying the chemical potential anisotropy of magnetic nano-structures that cannot be electrically connected to an electrode, but that are still expected to have interesting anisotropic properties"],"dc:format.checksum.md5":["87eda9de84448d1f82354d60eee3eb5f"],"dc:identifier.doi":["10.17863/CAM.11721"],"dc:language":["eng"],"dc:publisher.institution":["University of Cambridge"],"dc:relation.isreferencedby.uri":["https://www.repository.cam.ac.uk/handle/1810/265543"],"dc:rights":["https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/42cbb42f-6f71-46d7-8f1a-cf81ce420c3b/download","https://www.rioxx.net/licenses/all-rights-reserved/"],"dc:rights.embargotype":["controlled.access"],"dc:title":["Magnetically controlled chemical potential in field effect devices"],"dc:type":["Thesis"],"dc:type.qualificationlevel":["Doctoral"],"dc:type.qualificationname":["Doctor of Philosophy (PhD)"]},"updated_at":"2026-07-22T22:24:03Z"}