{"id":{"repo_id":"calpoly","oai_identifier":"oai:digitalcommons.calpoly.edu:theses-2787"},"canonical_url":"https://search.dev.ndltd.org/etd/calpoly/oai:digitalcommons.calpoly.edu:theses-2787","repository":{"repo_id":"calpoly","name":"Cal Poly","base_url":"https://digitalcommons.calpoly.edu/do/oai/"},"display":{"title":"Hall Effect Modeling in FEM Simulators and Comparison to Experimental Results in Silicon and Printed Sensors","abstract":"<p>Finite element method simulation models for thin-film semiconductor-based Hall sensors were developed using secondary data in order to understand their behavior under strong magnetic fields. Given a device geometry and charge carrier density and mobility, the models accurately calculated sensor resistance, Hall voltage under a normally-incident constant magnetic field, and expected offset from a population of Hall devices. The model was successfully matched against data from integrated chip Hall sensors from St. Jude Medical. Additionally, the feasibility of creating Hall effect devices with common carbon ink was explored experimentally. The material properties obtained from testing these ink-based devices through the Van der Pauw method were added to the simulation model to analyze validity of the collected data.</p>","abstract_html":"&lt;p&gt;Finite element method simulation models for thin-film semiconductor-based Hall sensors were developed using secondary data in order to understand their behavior under strong magnetic fields. Given a device geometry and charge carrier density and mobility, the models accurately calculated sensor resistance, Hall voltage under a normally-incident constant magnetic field, and expected offset from a population of Hall devices. The model was successfully matched against data from integrated chip Hall sensors from St. Jude Medical. Additionally, the feasibility of creating Hall effect devices with common carbon ink was explored experimentally. The material properties obtained from testing these ink-based devices through the Van der Pauw method were added to the simulation model to analyze validity of the collected data.&lt;/p&gt;","abstract_has_math":false,"creators":["Frem, Leonardo A"],"institution":null,"degree_name":"MS in Electrical Engineering","degree_level":null,"degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Tina Smilkstein"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-06-01T07:00:00Z","date_published":"2016-06-01T07:00:00Z","updated_at":"2026-07-24T01:32:55Z","subjects":["Finite element method (FEM) model","Hall sensors","printed electronics","Biomedical","Electrical and Electronics","Electromagnetics and Photonics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["10.15368/theses.2016.86"],"render_values":[{"text":"10.15368/theses.2016.86","href":"https://doi.org/10.15368/theses.2016.86","code":true}]}]},"links":{"outbound_url":"https://digitalcommons.calpoly.edu/theses/1618","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Tina Smilkstein"]},{"key":"dc:creator","label":"Author","values":["Frem, Leonardo A"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2016-06-10T07:00:00Z"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["MS in Electrical Engineering"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Finite element method (FEM) model","Hall sensors","printed electronics","Biomedical","Electrical and Electronics","Electromagnetics and Photonics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.calpoly.edu/theses/1618","10.15368/theses.2016.86"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["<p>Finite element method simulation models for thin-film semiconductor-based Hall sensors were developed using secondary data in order to understand their behavior under strong magnetic fields. Given a device geometry and charge carrier density and mobility, the models accurately calculated sensor resistance, Hall voltage under a normally-incident constant magnetic field, and expected offset from a population of Hall devices. The model was successfully matched against data from integrated chip Hall sensors from St. Jude Medical. Additionally, the feasibility of creating Hall effect devices with common carbon ink was explored experimentally. The material properties obtained from testing these ink-based devices through the Van der Pauw method were added to the simulation model to analyze validity of the collected data.</p>"]},{"key":"dc:title","label":"Title","values":["Hall Effect Modeling in FEM Simulators and Comparison to Experimental Results in Silicon and Printed Sensors"]}]}],"canonical_facts":{"dc:contributor":["Tina Smilkstein"],"dc:creator":["Frem, Leonardo A"],"dc:date.available":["2016-06-10T07:00:00Z"],"dc:description.abstract":["<p>Finite element method simulation models for thin-film semiconductor-based Hall sensors were developed using secondary data in order to understand their behavior under strong magnetic fields. Given a device geometry and charge carrier density and mobility, the models accurately calculated sensor resistance, Hall voltage under a normally-incident constant magnetic field, and expected offset from a population of Hall devices. The model was successfully matched against data from integrated chip Hall sensors from St. Jude Medical. Additionally, the feasibility of creating Hall effect devices with common carbon ink was explored experimentally. The material properties obtained from testing these ink-based devices through the Van der Pauw method were added to the simulation model to analyze validity of the collected data.</p>"],"dc:identifier":["https://digitalcommons.calpoly.edu/theses/1618","10.15368/theses.2016.86"],"dc:subject":["Finite element method (FEM) model","Hall sensors","printed electronics","Biomedical","Electrical and Electronics","Electromagnetics and Photonics"],"dc:title":["Hall Effect Modeling in FEM Simulators and Comparison to Experimental Results in Silicon and Printed Sensors"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_name":["MS in Electrical Engineering"]},"updated_at":"2026-07-24T01:32:55Z"}