{"id":{"repo_id":"cadiz","oai_identifier":"oai:rodin.uca.es:10498/30339"},"canonical_url":"https://search.dev.ndltd.org/etd/cadiz/oai:rodin.uca.es:10498/30339","repository":{"repo_id":"cadiz","name":"Universidad de Cadiz","base_url":"https://rodin.uca.es/oai/request"},"display":{"title":"Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices","abstract":"The improvement of power electronic devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it presents narrow and inadequate electrical characteristics to be use in power electronics. More efficient green electronic systems will be reached by wide band gap or ultra wide band gap semiconductors since they can provide larger blocking capabilities, higher performance-cost ratios and they can reduce the thermal requirements. Among the candidates, diamond is found to be the ultimate material to meet the power electronic trade-off between the on-resistance and the blocking capabilities. The ultra wide bandgap (UWBG) of 5.5 eV leads to a non linear increase of the performance. The higher critical electric field (> 10 MV.cm−1 ) allows the use of higher doping concentrations comparing with Si-technology. Which in combination with a superior bulk carrier mobility at room temperature for both electrons and holes (1060 cm2 .V−1 s −1 and 2100 cm2 .V−1 s −1 , respectively) favours the reduction of the devices’ resistance. Moreover, the resistivity will be reduced with increasing temperature due to the deep dopants in diamond (ionization energies of B, P or N of 0.38 eV, 0.58 eV and 1.7 eV, respectively), which result in incomplete ionization at room temperature. Likewise, the outstanding thermal conductivity (2200 W.m−1K −1 ) and the low concentration of intrinsic carriers (it is required a larger thermal energy to promote electrons from the valence band to the conduction band than in semiconductors with smaller bandgap) make diamond the most suitable material for high temperature operation. The most widely used device whether in analog or digital circuits in the Electronic Industry is the metal-oxide-semiconductor field effect transistor (MOSFET). The focus will therefore be on this type of device, particularly based on diamond, which is also the subject of this thesis. However, the upgrade to the new generation of diamond-based power MOSFETs is limited. The main issues are caused by the lack of a native oxide that meets the demanding requirements of the diamond interface. This latter degrades the performance of the devices and leads to a premature breakdown. And also by the difficulty of growing quality n-type diamond layers and the lack of efficient p-channel devices comparable to their n-channel counterparts reached by other WBGSs. It is still challenging provide devices that exploit the diamond’s properties to their full potential. This thesis proposes an alternative high-κ ZrO2/diamond-based hybrid-gate p-channel MOSFET taking advantage of the outstanding properties of these materials. In addition to the superior properties of diamond, mentioned above, zirconium dioxide contributes a barrier for holes of 2 eV, a critical electric field of 2 MV.cm−1 , a high-enthalpy of formation and an excellent thermodynamic and thermal stability. An attempt has been made to correlate the electrical behaviour of the MOS structure with the microstructural analysis. This has required an in-depth characterization that can be divided Resumen de la tesis vi in two main blocks: • Materials characterization by the use of microscopy techniques such as high resolution transmission electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDX) and valence electron energy loss spectroscopy (VEELS). • Fabrication and electrical characterization of the electronic devices through different growth techniques (for both diamond and oxide thin films) such as microwave plasma assisted chemical vapour deposition (MPACVD), physical vapour deposition (PVD) and atomic layer deposition (ALD); laser lithography, metals deposition using electron beam (ebeam) evaporation and various surface and thermal treatments to finally perform the electrical measurements. In summary, this manuscript consists of the following chapters: • Chapter 1 will introduce the fabrication process methodology and state of the art of the diamond-based MOSFETs. • Chapter 2 is dedicated to the full analysis of the MOS capacitors, specially focus on understanding the behaviour of ZrO2 thin films. • Chapter 3 will deal with the implementation and characterization of this MOS structure in a novel hybrid-gate p-channel D3MOSFET. • The Overall conclusion and further outlook chapter will summarize the current status and will provide future prospective for such electronic devices.","abstract_html":"The improvement of power electronic devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it presents narrow and inadequate electrical characteristics to be use in power electronics. More efficient green electronic systems will be reached by wide band gap or ultra wide band gap semiconductors since they can provide larger blocking capabilities, higher performance-cost ratios and they can reduce the thermal requirements. Among the candidates, diamond is found to be the ultimate material to meet the power electronic trade-off between the on-resistance and the blocking capabilities. The ultra wide bandgap (UWBG) of 5.5 eV leads to a non linear increase of the performance. The higher critical electric field (> 10 MV.cm−1 ) allows the use of higher doping concentrations comparing with Si-technology. Which in combination with a superior bulk carrier mobility at room temperature for both electrons and holes (1060 cm2 .V−1 s −1 and 2100 cm2 .V−1 s −1 , respectively) favours the reduction of the devices’ resistance. Moreover, the resistivity will be reduced with increasing temperature due to the deep dopants in diamond (ionization energies of B, P or N of 0.38 eV, 0.58 eV and 1.7 eV, respectively), which result in incomplete ionization at room temperature. Likewise, the outstanding thermal conductivity (2200 W.m−1K −1 ) and the low concentration of intrinsic carriers (it is required a larger thermal energy to promote electrons from the valence band to the conduction band than in semiconductors with smaller bandgap) make diamond the most suitable material for high temperature operation. The most widely used device whether in analog or digital circuits in the Electronic Industry is the metal-oxide-semiconductor field effect transistor (MOSFET). The focus will therefore be on this type of device, particularly based on diamond, which is also the subject of this thesis. However, the upgrade to the new generation of diamond-based power MOSFETs is limited. The main issues are caused by the lack of a native oxide that meets the demanding requirements of the diamond interface. This latter degrades the performance of the devices and leads to a premature breakdown. And also by the difficulty of growing quality n-type diamond layers and the lack of efficient p-channel devices comparable to their n-channel counterparts reached by other WBGSs. It is still challenging provide devices that exploit the diamond’s properties to their full potential. This thesis proposes an alternative high-κ ZrO2/diamond-based hybrid-gate p-channel MOSFET taking advantage of the outstanding properties of these materials. In addition to the superior properties of diamond, mentioned above, zirconium dioxide contributes a barrier for holes of 2 eV, a critical electric field of 2 MV.cm−1 , a high-enthalpy of formation and an excellent thermodynamic and thermal stability. An attempt has been made to correlate the electrical behaviour of the MOS structure with the microstructural analysis. This has required an in-depth characterization that can be divided Resumen de la tesis vi in two main blocks: • Materials characterization by the use of microscopy techniques such as high resolution transmission electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDX) and valence electron energy loss spectroscopy (VEELS). • Fabrication and electrical characterization of the electronic devices through different growth techniques (for both diamond and oxide thin films) such as microwave plasma assisted chemical vapour deposition (MPACVD), physical vapour deposition (PVD) and atomic layer deposition (ALD); laser lithography, metals deposition using electron beam (ebeam) evaporation and various surface and thermal treatments to finally perform the electrical measurements. In summary, this manuscript consists of the following chapters: • Chapter 1 will introduce the fabrication process methodology and state of the art of the diamond-based MOSFETs. • Chapter 2 is dedicated to the full analysis of the MOS capacitors, specially focus on understanding the behaviour of ZrO2 thin films. • Chapter 3 will deal with the implementation and characterization of this MOS structure in a novel hybrid-gate p-channel D3MOSFET. • The Overall conclusion and further outlook chapter will summarize the current status and will provide future prospective for such electronic devices.","abstract_has_math":false,"creators":["Soto Portillo, Beatriz"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Villar Castro, María del Pilar","Pernot, Julien"],"committee_chairs":[],"committee_members":[],"year":2023,"date_issued":"2023","date_published":"2023","updated_at":"2026-07-24T01:29:50Z","subjects":["electronic devices","MOS capacitors","diamond"],"languages":["eng"],"rights":["Attribution-NonCommercial-NoDerivatives 4.0 Internacional"],"rights_urls":["http://creativecommons.org/licenses/by-nc-nd/4.0/"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10498/30339","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Villar Castro, María del Pilar","Pernot, Julien"]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica"]},{"key":"dc:creator","label":"Author","values":["Soto Portillo, Beatriz"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2024-01-28T08:41:56Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2024-01-28T08:41:56Z"]},{"key":"dc:date.issued","label":"Date","values":["2023"]},{"key":"dc:type","label":"Dc Type","values":["doctoral thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electronic devices","MOS capacitors","diamond"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Attribution-NonCommercial-NoDerivatives 4.0 Internacional"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://creativecommons.org/licenses/by-nc-nd/4.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10498/30339"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The improvement of power electronic devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it presents narrow and inadequate electrical characteristics to be use in power electronics. More efficient green electronic systems will be reached by wide band gap or ultra wide band gap semiconductors since they can provide larger blocking capabilities, higher performance-cost ratios and they can reduce the thermal requirements. Among the candidates, diamond is found to be the ultimate material to meet the power electronic trade-off between the on-resistance and the blocking capabilities. The ultra wide bandgap (UWBG) of 5.5 eV leads to a non linear increase of the performance. The higher critical electric field (> 10 MV.cm−1 ) allows the use of higher doping concentrations comparing with Si-technology. Which in combination with a superior bulk carrier mobility at room temperature for both electrons and holes (1060 cm2 .V−1 s −1 and 2100 cm2 .V−1 s −1 , respectively) favours the reduction of the devices’ resistance. Moreover, the resistivity will be reduced with increasing temperature due to the deep dopants in diamond (ionization energies of B, P or N of 0.38 eV, 0.58 eV and 1.7 eV, respectively), which result in incomplete ionization at room temperature. Likewise, the outstanding thermal conductivity (2200 W.m−1K −1 ) and the low concentration of intrinsic carriers (it is required a larger thermal energy to promote electrons from the valence band to the conduction band than in semiconductors with smaller bandgap) make diamond the most suitable material for high temperature operation. The most widely used device whether in analog or digital circuits in the Electronic Industry is the metal-oxide-semiconductor field effect transistor (MOSFET). The focus will therefore be on this type of device, particularly based on diamond, which is also the subject of this thesis. However, the upgrade to the new generation of diamond-based power MOSFETs is limited. The main issues are caused by the lack of a native oxide that meets the demanding requirements of the diamond interface. This latter degrades the performance of the devices and leads to a premature breakdown. And also by the difficulty of growing quality n-type diamond layers and the lack of efficient p-channel devices comparable to their n-channel counterparts reached by other WBGSs. It is still challenging provide devices that exploit the diamond’s properties to their full potential. This thesis proposes an alternative high-κ ZrO2/diamond-based hybrid-gate p-channel MOSFET taking advantage of the outstanding properties of these materials. In addition to the superior properties of diamond, mentioned above, zirconium dioxide contributes a barrier for holes of 2 eV, a critical electric field of 2 MV.cm−1 , a high-enthalpy of formation and an excellent thermodynamic and thermal stability. An attempt has been made to correlate the electrical behaviour of the MOS structure with the microstructural analysis. This has required an in-depth characterization that can be divided Resumen de la tesis vi in two main blocks: • Materials characterization by the use of microscopy techniques such as high resolution transmission electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDX) and valence electron energy loss spectroscopy (VEELS). • Fabrication and electrical characterization of the electronic devices through different growth techniques (for both diamond and oxide thin films) such as microwave plasma assisted chemical vapour deposition (MPACVD), physical vapour deposition (PVD) and atomic layer deposition (ALD); laser lithography, metals deposition using electron beam (ebeam) evaporation and various surface and thermal treatments to finally perform the electrical measurements. In summary, this manuscript consists of the following chapters: • Chapter 1 will introduce the fabrication process methodology and state of the art of the diamond-based MOSFETs. • Chapter 2 is dedicated to the full analysis of the MOS capacitors, specially focus on understanding the behaviour of ZrO2 thin films. • Chapter 3 will deal with the implementation and characterization of this MOS structure in a novel hybrid-gate p-channel D3MOSFET. • The Overall conclusion and further outlook chapter will summarize the current status and will provide future prospective for such electronic devices.","La mejora de los dispositivos electrónicos de potencia, haciéndolos duraderos y fiables en entornos de alta potencia, es la clave de la producción y distribución eficientes de los sistemas de energía eléctrica con bajas emisiones de carbono para nuestro futuro sistema energético, eliminando los sistemas auxiliares y reduciendo pérdidas. A pesar de que el silicio es un material bien establecido, presenta limitadas e inadecuadas características eléctricas para su uso en electrónica de potencia. Los sistemas ecológicos más eficientes se conseguirán a través de semiconductores de banda ancha o de banda ultra ancha, ya que pueden proporcionar una mayor capacidad de soportar alto voltaje, una mejor relación rendimiento-coste y pueden reducir los requisitos térmicos. Entre los candidatos a sustituir el Si, el diamante es el material óptimo para satisfacer el compromiso entre la resistencia de encendido y la capacidad de soportar altos voltajes que establece la electrónica de potencia. El ultra ancho de banda prohibida de 5.5 eV, conduce a un incremento no lineal del rendimiento. El mayor campo eléctrico crítico (> 10 MV.cm−1 ) permite el uso de mayores concentraciones de dopado comparado con la tecnología de Si. Lo cuál, en combinación con una movilidad de portadores en volumen a temperatura ambiente superior (1060 cm2 .V−1 s −1 y 2100 cm2 .V−1 s −1 , respectivamente) favorece la reducción de la resistencia de los dispositivos. Además, la resistividad será también reducida al incrementarse la temperatura debido a los dopantes profundos que presenta el diamante (con energías de ionización del B, P o N de 0.38 eV, 0.58 eV y 1.7 eV, respectivamente) dando lugar a una ionización incompleta a temperatura ambiente. Así mismo, la extraordinaria conductividad térmica (2200 W.m−1K −1 ) y la baja concentración de portadores intrínsecos (se necesita una energía térmica mayor para promocionar electrones desde la banda de valencia a la banda de conducción que en semiconductores con menor ancho de band prohibida) hacen del diamante el material más adecuado para operar a altas temperaturas. El dispositivo más utilizado en circuitos analógicos o digitales de la industria electrónica es el transistor de efecto de campo metal-óxido-semiconductor (MOSFET). De hecho, la mayoría de los microprocesadores comerciales se basan en este tipo de transistores. Por tanto, nos centraremos en este tipo de dispositivos, sobre todo los basados en diamante, los cuáles son objeto de esta tesis. Sin embargo, la mejora de la nueva generación de MOSFET de potencia basados en diamante es limitada. Los principales problemas se deben a la falta de un óxido nativo que cumpla los exigentes requisitos de la interfaz de diamante. Esto último degrada el rendimiento de los dispositivos y conduce a una avería prematura. Y también por la dificultad de crecer capas de diamante de tipo n de calidad y la falta de dispositivos eficientes de canal p comparables a sus homólogos de canal n alcanzados por otros WBGS. Sigue siendo un reto proporcionar dispositivos que exploten al máximo las propiedades del diamante. En esta tesis se propone un transistor de efecto campo metal-óxido-semiconductor (MOSFET en sus siglas en inglés) de canal p y puerta híbrida basado en diamante y en un óxido de alta constante dieléctrica, ZrO2, aprovechando las excelentes propiedades de estos materiales. En combinación con las extraordinarias propiedades del diamante, mencionadas anteriormente, el dióxido de zirconio contribuye con una barrera para huecos de 2 eV, un campo eléctrico crítico de 2 MV.cm−1 , una alta entalpía de formación y una excelente estabilidad térmica y termodinámica. Se ha intentado correlacionar el comportamiento eléctrico de la estructura MOS con el análisis microestructural. Esto ha requerido de una caracterización en profundidad que se puede dividir en dos grandes bloques: • Caracterización de materiales mediante el uso de técnicas de microscopía como microscopía electrónica de transmisión de alta resolución (HREM, en sus siglas en inglés), espectroscopía de rayos X de energía dispersiva (EDX, en sus siglas en inglés) y espectroscopía de pérdida de energía de electrones de valencia (VEELS, en sus siglas en inglés). • Fabricación y caracterización eléctrica de los dispositivos electrónicos mediante diferentes técnicas de crecimiento (tanto para capas de diamante como películas finas de óxido) tales como deposición química en fase vapor asistida por plasma de microondas (MPACVD, en sus siglas en inglés), deposición física en fase vapor (PVD, en sus siglas en inglés) y deposición en capa atómica (ALD, en sus siglas en inglés); litografía láser, deposición de metales mediante evaporación por haz de electrones (ebeam, en sus siglas en inglés) y diversos tratamientos superficiales y térmicos para finalmente realizar las medidas eléctricas. En resumen, esta tesis consta de los siguientes capítulos: • El capítulo 1 presenta la metodología del proceso de fabricación y el estado del arte de los MOSFETs basados en diamante. • El capítulo 2 está dedicado al análisis completo de los condensadores MOS, se centra especialmente en la comprensión del comportamiento de las películas delgadas de ZrO2. • El capítulo 3 tratará sobre la implementación y caracterización de esta estructura MOS en un novedoso MOSFET en modo depleción profunda de canal p de compuerta híbrida. • En el capítulo Conclusiones generales y perspectivas de futuro, se resumirá el estado actual y se expondrán las perspectivas futuras de este tipo de dispositivos electrónicos."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices"]}]}],"canonical_facts":{"dc:contributor.advisor":["Villar Castro, María del Pilar","Pernot, Julien"],"dc:contributor.other":["Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica"],"dc:creator":["Soto Portillo, Beatriz"],"dc:date.accessioned":["2024-01-28T08:41:56Z"],"dc:date.available":["2024-01-28T08:41:56Z"],"dc:date.issued":["2023"],"dc:description.abstract":["The improvement of power electronic devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a well-established material it presents narrow and inadequate electrical characteristics to be use in power electronics. More efficient green electronic systems will be reached by wide band gap or ultra wide band gap semiconductors since they can provide larger blocking capabilities, higher performance-cost ratios and they can reduce the thermal requirements. Among the candidates, diamond is found to be the ultimate material to meet the power electronic trade-off between the on-resistance and the blocking capabilities. The ultra wide bandgap (UWBG) of 5.5 eV leads to a non linear increase of the performance. The higher critical electric field (> 10 MV.cm−1 ) allows the use of higher doping concentrations comparing with Si-technology. Which in combination with a superior bulk carrier mobility at room temperature for both electrons and holes (1060 cm2 .V−1 s −1 and 2100 cm2 .V−1 s −1 , respectively) favours the reduction of the devices’ resistance. Moreover, the resistivity will be reduced with increasing temperature due to the deep dopants in diamond (ionization energies of B, P or N of 0.38 eV, 0.58 eV and 1.7 eV, respectively), which result in incomplete ionization at room temperature. Likewise, the outstanding thermal conductivity (2200 W.m−1K −1 ) and the low concentration of intrinsic carriers (it is required a larger thermal energy to promote electrons from the valence band to the conduction band than in semiconductors with smaller bandgap) make diamond the most suitable material for high temperature operation. The most widely used device whether in analog or digital circuits in the Electronic Industry is the metal-oxide-semiconductor field effect transistor (MOSFET). The focus will therefore be on this type of device, particularly based on diamond, which is also the subject of this thesis. However, the upgrade to the new generation of diamond-based power MOSFETs is limited. The main issues are caused by the lack of a native oxide that meets the demanding requirements of the diamond interface. This latter degrades the performance of the devices and leads to a premature breakdown. And also by the difficulty of growing quality n-type diamond layers and the lack of efficient p-channel devices comparable to their n-channel counterparts reached by other WBGSs. It is still challenging provide devices that exploit the diamond’s properties to their full potential. This thesis proposes an alternative high-κ ZrO2/diamond-based hybrid-gate p-channel MOSFET taking advantage of the outstanding properties of these materials. In addition to the superior properties of diamond, mentioned above, zirconium dioxide contributes a barrier for holes of 2 eV, a critical electric field of 2 MV.cm−1 , a high-enthalpy of formation and an excellent thermodynamic and thermal stability. An attempt has been made to correlate the electrical behaviour of the MOS structure with the microstructural analysis. This has required an in-depth characterization that can be divided Resumen de la tesis vi in two main blocks: • Materials characterization by the use of microscopy techniques such as high resolution transmission electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDX) and valence electron energy loss spectroscopy (VEELS). • Fabrication and electrical characterization of the electronic devices through different growth techniques (for both diamond and oxide thin films) such as microwave plasma assisted chemical vapour deposition (MPACVD), physical vapour deposition (PVD) and atomic layer deposition (ALD); laser lithography, metals deposition using electron beam (ebeam) evaporation and various surface and thermal treatments to finally perform the electrical measurements. In summary, this manuscript consists of the following chapters: • Chapter 1 will introduce the fabrication process methodology and state of the art of the diamond-based MOSFETs. • Chapter 2 is dedicated to the full analysis of the MOS capacitors, specially focus on understanding the behaviour of ZrO2 thin films. • Chapter 3 will deal with the implementation and characterization of this MOS structure in a novel hybrid-gate p-channel D3MOSFET. • The Overall conclusion and further outlook chapter will summarize the current status and will provide future prospective for such electronic devices.","La mejora de los dispositivos electrónicos de potencia, haciéndolos duraderos y fiables en entornos de alta potencia, es la clave de la producción y distribución eficientes de los sistemas de energía eléctrica con bajas emisiones de carbono para nuestro futuro sistema energético, eliminando los sistemas auxiliares y reduciendo pérdidas. A pesar de que el silicio es un material bien establecido, presenta limitadas e inadecuadas características eléctricas para su uso en electrónica de potencia. Los sistemas ecológicos más eficientes se conseguirán a través de semiconductores de banda ancha o de banda ultra ancha, ya que pueden proporcionar una mayor capacidad de soportar alto voltaje, una mejor relación rendimiento-coste y pueden reducir los requisitos térmicos. Entre los candidatos a sustituir el Si, el diamante es el material óptimo para satisfacer el compromiso entre la resistencia de encendido y la capacidad de soportar altos voltajes que establece la electrónica de potencia. El ultra ancho de banda prohibida de 5.5 eV, conduce a un incremento no lineal del rendimiento. El mayor campo eléctrico crítico (> 10 MV.cm−1 ) permite el uso de mayores concentraciones de dopado comparado con la tecnología de Si. Lo cuál, en combinación con una movilidad de portadores en volumen a temperatura ambiente superior (1060 cm2 .V−1 s −1 y 2100 cm2 .V−1 s −1 , respectivamente) favorece la reducción de la resistencia de los dispositivos. Además, la resistividad será también reducida al incrementarse la temperatura debido a los dopantes profundos que presenta el diamante (con energías de ionización del B, P o N de 0.38 eV, 0.58 eV y 1.7 eV, respectivamente) dando lugar a una ionización incompleta a temperatura ambiente. Así mismo, la extraordinaria conductividad térmica (2200 W.m−1K −1 ) y la baja concentración de portadores intrínsecos (se necesita una energía térmica mayor para promocionar electrones desde la banda de valencia a la banda de conducción que en semiconductores con menor ancho de band prohibida) hacen del diamante el material más adecuado para operar a altas temperaturas. El dispositivo más utilizado en circuitos analógicos o digitales de la industria electrónica es el transistor de efecto de campo metal-óxido-semiconductor (MOSFET). De hecho, la mayoría de los microprocesadores comerciales se basan en este tipo de transistores. Por tanto, nos centraremos en este tipo de dispositivos, sobre todo los basados en diamante, los cuáles son objeto de esta tesis. Sin embargo, la mejora de la nueva generación de MOSFET de potencia basados en diamante es limitada. Los principales problemas se deben a la falta de un óxido nativo que cumpla los exigentes requisitos de la interfaz de diamante. Esto último degrada el rendimiento de los dispositivos y conduce a una avería prematura. Y también por la dificultad de crecer capas de diamante de tipo n de calidad y la falta de dispositivos eficientes de canal p comparables a sus homólogos de canal n alcanzados por otros WBGS. Sigue siendo un reto proporcionar dispositivos que exploten al máximo las propiedades del diamante. En esta tesis se propone un transistor de efecto campo metal-óxido-semiconductor (MOSFET en sus siglas en inglés) de canal p y puerta híbrida basado en diamante y en un óxido de alta constante dieléctrica, ZrO2, aprovechando las excelentes propiedades de estos materiales. En combinación con las extraordinarias propiedades del diamante, mencionadas anteriormente, el dióxido de zirconio contribuye con una barrera para huecos de 2 eV, un campo eléctrico crítico de 2 MV.cm−1 , una alta entalpía de formación y una excelente estabilidad térmica y termodinámica. Se ha intentado correlacionar el comportamiento eléctrico de la estructura MOS con el análisis microestructural. Esto ha requerido de una caracterización en profundidad que se puede dividir en dos grandes bloques: • Caracterización de materiales mediante el uso de técnicas de microscopía como microscopía electrónica de transmisión de alta resolución (HREM, en sus siglas en inglés), espectroscopía de rayos X de energía dispersiva (EDX, en sus siglas en inglés) y espectroscopía de pérdida de energía de electrones de valencia (VEELS, en sus siglas en inglés). • Fabricación y caracterización eléctrica de los dispositivos electrónicos mediante diferentes técnicas de crecimiento (tanto para capas de diamante como películas finas de óxido) tales como deposición química en fase vapor asistida por plasma de microondas (MPACVD, en sus siglas en inglés), deposición física en fase vapor (PVD, en sus siglas en inglés) y deposición en capa atómica (ALD, en sus siglas en inglés); litografía láser, deposición de metales mediante evaporación por haz de electrones (ebeam, en sus siglas en inglés) y diversos tratamientos superficiales y térmicos para finalmente realizar las medidas eléctricas. En resumen, esta tesis consta de los siguientes capítulos: • El capítulo 1 presenta la metodología del proceso de fabricación y el estado del arte de los MOSFETs basados en diamante. • El capítulo 2 está dedicado al análisis completo de los condensadores MOS, se centra especialmente en la comprensión del comportamiento de las películas delgadas de ZrO2. • El capítulo 3 tratará sobre la implementación y caracterización de esta estructura MOS en un novedoso MOSFET en modo depleción profunda de canal p de compuerta híbrida. • En el capítulo Conclusiones generales y perspectivas de futuro, se resumirá el estado actual y se expondrán las perspectivas futuras de este tipo de dispositivos electrónicos."],"dc:format":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/10498/30339"],"dc:language.iso":["eng"],"dc:rights":["Attribution-NonCommercial-NoDerivatives 4.0 Internacional"],"dc:rights.uri":["http://creativecommons.org/licenses/by-nc-nd/4.0/"],"dc:subject":["electronic devices","MOS capacitors","diamond"],"dc:title":["Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices"],"dc:type":["doctoral thesis"]},"updated_at":"2026-07-24T01:29:50Z"}