{"id":{"repo_id":"buffalo","oai_identifier":"oai:ubir.buffalo.edu:10477/86818"},"canonical_url":"https://search.dev.ndltd.org/etd/buffalo/oai:ubir.buffalo.edu:10477/86818","repository":{"repo_id":"buffalo","name":"Buffalo","base_url":"https://ubir.buffalo.edu/oai/request"},"display":{"title":"Fabrication of Micron Scale Test Structures for Magneto-Electric Chromia (Cr2O3) Thin Films","abstract":"M.S.","abstract_html":"M.S.","abstract_has_math":false,"creators":["Saha, Chinmoy Nath"],"institution":"State University of New York at Buffalo","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Singisetti, Uttam","Electrical Engineering"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-02-25T23:23:05Z","date_published":"2025-02-25T23:23:05Z","updated_at":"2026-07-27T19:05:37Z","subjects":["electrical engineering"],"languages":["eng"],"rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10477/86818","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Singisetti, Uttam","Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Saha, Chinmoy Nath"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-02-25T23:23:05Z","2020","2020-07-24 00:39:25"]},{"key":"dc:publisher","label":"Institution","values":["State University of New York at Buffalo"]},{"key":"dc:type","label":"Dc Type","values":["Text","Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electrical engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/10477/86818"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["M.S.","Chromium oxide (Cr2O3) is one of the few magneto-electric (ME) oxides with insulating behavior which exhibits voltage-controlled magnetization switching at room temperature. It has the potential for faster switching speeds compared to existing magnetization switching technologies. The insulating behavior allows for low energy voltage-controlled switching. This particular characteristic has made chromia (Cr2O3) an emerging candidate for post-CMOS energy efficient spintronic devices. Although successful voltage-controlled magnetic switching is demonstrated in bulk Cr2O3 crystals, it remains a significant challenge to demonstrate the same in the thin films needed for device applications. Recently, ME switching has been reported in thin films, however the response was measured with magneto-optic effect. In this study, we propose to study the switching of thin film chromia using electrical methods. Our first objective is to measure Capacitance-Voltage (C-V) characteristics of the proposed device structure at room temperature in the presence of a magnetic field. This measurement should show a ferroelectric behavior which is expected from ME effect. Our device structure consists of Cr2O3/conducting Vanadium Oxide (V2O3) grown on insulating sapphire (Al2O3) substrate. Cr2O3 films with V2O3 bottom conductor showed lower leakage current compared to Pd or Pt bottom contacts which is already reported by recent studies. However, the thin films are not insulating enough for capacitance measurement. Previous work has shown that the leakage is due to conducting pinholes. A smaller area device has less chance of intersecting a leakage pinhole, hence has lower leakage current density. In this work, we developed a new fabrication method to form micron to nanoscale test structures, which will enable capacitance measurements. We used chlorine-based Reactive Ion Etching (RIE) technique to etch Cr2O3 and stop on V2O3 layer. Next, we formed contacts on the top (Cr2O3) and bottom (V2O3) layer. Using this device structure, we can measure the high frequency response by measuring S-parameters. We demonstrated the complete fabrication process that showed low background capacitance. However, the devices did not show any ME effect due to the RIE damage of the bottom electrode (V2O3) which made it insulating.","**To request an accessible version of the file(s) associated with this item, contact library@buffalo.edu. Please include the item's persistent URL [http://hdl.handle.net/. . .] in your request.**"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Fabrication of Micron Scale Test Structures for Magneto-Electric Chromia (Cr2O3) Thin Films"]}]}],"canonical_facts":{"dc:contributor":["Singisetti, Uttam","Electrical Engineering"],"dc:creator":["Saha, Chinmoy Nath"],"dc:date":["2025-02-25T23:23:05Z","2020","2020-07-24 00:39:25"],"dc:description":["M.S.","Chromium oxide (Cr2O3) is one of the few magneto-electric (ME) oxides with insulating behavior which exhibits voltage-controlled magnetization switching at room temperature. It has the potential for faster switching speeds compared to existing magnetization switching technologies. The insulating behavior allows for low energy voltage-controlled switching. This particular characteristic has made chromia (Cr2O3) an emerging candidate for post-CMOS energy efficient spintronic devices. Although successful voltage-controlled magnetic switching is demonstrated in bulk Cr2O3 crystals, it remains a significant challenge to demonstrate the same in the thin films needed for device applications. Recently, ME switching has been reported in thin films, however the response was measured with magneto-optic effect. In this study, we propose to study the switching of thin film chromia using electrical methods. Our first objective is to measure Capacitance-Voltage (C-V) characteristics of the proposed device structure at room temperature in the presence of a magnetic field. This measurement should show a ferroelectric behavior which is expected from ME effect. Our device structure consists of Cr2O3/conducting Vanadium Oxide (V2O3) grown on insulating sapphire (Al2O3) substrate. Cr2O3 films with V2O3 bottom conductor showed lower leakage current compared to Pd or Pt bottom contacts which is already reported by recent studies. However, the thin films are not insulating enough for capacitance measurement. Previous work has shown that the leakage is due to conducting pinholes. A smaller area device has less chance of intersecting a leakage pinhole, hence has lower leakage current density. In this work, we developed a new fabrication method to form micron to nanoscale test structures, which will enable capacitance measurements. We used chlorine-based Reactive Ion Etching (RIE) technique to etch Cr2O3 and stop on V2O3 layer. Next, we formed contacts on the top (Cr2O3) and bottom (V2O3) layer. Using this device structure, we can measure the high frequency response by measuring S-parameters. We demonstrated the complete fabrication process that showed low background capacitance. However, the devices did not show any ME effect due to the RIE damage of the bottom electrode (V2O3) which made it insulating.","**To request an accessible version of the file(s) associated with this item, contact library@buffalo.edu. Please include the item's persistent URL [http://hdl.handle.net/. . .] in your request.**"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/10477/86818"],"dc:language":["eng"],"dc:publisher":["State University of New York at Buffalo"],"dc:rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"dc:subject":["electrical engineering"],"dc:title":["Fabrication of Micron Scale Test Structures for Magneto-Electric Chromia (Cr2O3) Thin Films"],"dc:type":["Text","Thesis"]},"updated_at":"2026-07-27T19:05:37Z"}