{"id":{"repo_id":"buffalo","oai_identifier":"oai:ubir.buffalo.edu:10477/84044"},"canonical_url":"https://search.dev.ndltd.org/etd/buffalo/oai:ubir.buffalo.edu:10477/84044","repository":{"repo_id":"buffalo","name":"Buffalo","base_url":"https://ubir.buffalo.edu/oai/request"},"display":{"title":"Transient Studies of Hot-Carrier Transport in 2D Semiconductors","abstract":"Ph.D.","abstract_html":"Ph.D.","abstract_has_math":false,"creators":["Nathawat, Jubin; 0000-0001-8520-2741"],"institution":"State University of New York at Buffalo","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Bird, Jonathan","Electrical Engineering"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-06-21T15:47:21Z","date_published":"2022-06-21T15:47:21Z","updated_at":"2026-07-27T19:05:30Z","subjects":["electrical engineering"],"languages":["eng"],"rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10477/84044","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Bird, Jonathan","Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Nathawat, Jubin; 0000-0001-8520-2741"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022-06-21T15:47:21Z","2020"]},{"key":"dc:publisher","label":"Institution","values":["State University of New York at Buffalo"]},{"key":"dc:type","label":"Dc Type","values":["Text","Dissertation"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electrical engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/10477/84044"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Ph.D.","The current carrying capacity of semiconductor devices is controlled by numerous distinct processes, taking place at different timescales and whose origins may be either intrinsic or extrinsic. The dominant intrinsic effect arises from optical-phonon emission by \"hot\" carriers, thus setting an upper limit for the current-carrying capacity of these devices. Typically, however, this ideal operation is not possible due to several additional, extrinsic mechanisms. Dominant among these are \"self-heating\" of the dielectric layers surrounding the device channel and injection of energetic (‘hot’) carriers (from the channel) into these layers. These problems are exacerbated in scaled devices, forcing researchers to look beyond conventional semiconductors towards materials such as graphene and other 2D semiconductors. In this thesis, we describe the use of a strategy of repetitive transient pulsing to investigate the details of self-heating and charge trapping in BN-encapsulated graphene transistors. When operating these devices under strongly nonequilibrium condition, we observe that, relative to more standard devices fabricated on SiO2 substrates, the encapsulation shows an enhanced immunity to charge-trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Next, through the application of a single-shot pulsing strategy to MoS2 transistors, we show how it is possible to mitigate the influence of extrinsic factors and to observe instead a saturated drift velocity (𝑣𝑑𝑠𝑎𝑡~5 – 7 × 106 cms-1) that is significantly higher than that reported in previous works, in which the influence of self-heating and deep oxide traps could not be excluded. Our study therefore reveals important information on the hot-carrier characteristics of devices based on emergent two-dimensional materials.","**To request an accessible version of the file(s) associated with this item, contact library@buffalo.edu. Please include the item's persistent URL [http://hdl.handle.net/. . .] in your request.**"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Transient Studies of Hot-Carrier Transport in 2D Semiconductors"]}]}],"canonical_facts":{"dc:contributor":["Bird, Jonathan","Electrical Engineering"],"dc:creator":["Nathawat, Jubin; 0000-0001-8520-2741"],"dc:date":["2022-06-21T15:47:21Z","2020"],"dc:description":["Ph.D.","The current carrying capacity of semiconductor devices is controlled by numerous distinct processes, taking place at different timescales and whose origins may be either intrinsic or extrinsic. The dominant intrinsic effect arises from optical-phonon emission by \"hot\" carriers, thus setting an upper limit for the current-carrying capacity of these devices. Typically, however, this ideal operation is not possible due to several additional, extrinsic mechanisms. Dominant among these are \"self-heating\" of the dielectric layers surrounding the device channel and injection of energetic (‘hot’) carriers (from the channel) into these layers. These problems are exacerbated in scaled devices, forcing researchers to look beyond conventional semiconductors towards materials such as graphene and other 2D semiconductors. In this thesis, we describe the use of a strategy of repetitive transient pulsing to investigate the details of self-heating and charge trapping in BN-encapsulated graphene transistors. When operating these devices under strongly nonequilibrium condition, we observe that, relative to more standard devices fabricated on SiO2 substrates, the encapsulation shows an enhanced immunity to charge-trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Next, through the application of a single-shot pulsing strategy to MoS2 transistors, we show how it is possible to mitigate the influence of extrinsic factors and to observe instead a saturated drift velocity (𝑣𝑑𝑠𝑎𝑡~5 – 7 × 106 cms-1) that is significantly higher than that reported in previous works, in which the influence of self-heating and deep oxide traps could not be excluded. Our study therefore reveals important information on the hot-carrier characteristics of devices based on emergent two-dimensional materials.","**To request an accessible version of the file(s) associated with this item, contact library@buffalo.edu. Please include the item's persistent URL [http://hdl.handle.net/. . .] in your request.**"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/10477/84044"],"dc:language":["eng"],"dc:publisher":["State University of New York at Buffalo"],"dc:rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"dc:subject":["electrical engineering"],"dc:title":["Transient Studies of Hot-Carrier Transport in 2D Semiconductors"],"dc:type":["Text","Dissertation"]},"updated_at":"2026-07-27T19:05:30Z"}