{"id":{"repo_id":"buffalo","oai_identifier":"oai:ubir.buffalo.edu:10477/79383"},"canonical_url":"https://search.dev.ndltd.org/etd/buffalo/oai:ubir.buffalo.edu:10477/79383","repository":{"repo_id":"buffalo","name":"Buffalo","base_url":"https://ubir.buffalo.edu/oai/request"},"display":{"title":"Systematic Characterization of Anomalously High Phase Transition Temperature In VO2 Thin Film Under Vacuum","abstract":"M.S.","abstract_html":"M.S.","abstract_has_math":false,"creators":["Palit, Anwesha"],"institution":"State University of New York at Buffalo","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Liu, Peter","Electrical Engineering"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-04-04T20:31:11Z","date_published":"2019-04-04T20:31:11Z","updated_at":"2026-07-27T19:05:16Z","subjects":["electrical engineering"],"languages":["eng"],"rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10477/79383","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Liu, Peter","Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Palit, Anwesha"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2019-04-04T20:31:11Z","2019","2019-01-10 17:21:28"]},{"key":"dc:publisher","label":"Institution","values":["State University of New York at Buffalo"]},{"key":"dc:type","label":"Dc Type","values":["Text","Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electrical engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/10477/79383"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["M.S.","Vanadium Dioxide (VO2) is a unique material, known for its phase transition from a low-temperature insulator or monoclinic phase (VO2(M1)) to high temperature metallic or rutile phase (VO2(R)) at ~340 K along with an increase in its conductivity by orders of magnitude. This makes it useful in various applications such as optical switching, detection, memory storage, sensors and smart window coatings. In this work, we attempt to study the behaviour of VO2 thin films under vacuum using Raman spectroscopy and electrical characterization. To affirm our findings, we measured several samples prepared by different groups on different substrates using different preparation methods. Our observations hold true for all the samples studied. Under ambient conditions, we observed a normal phase transition temperature at ~340 K for the samples, however under vacuum, a high phase transition temperature of approximately ~420 K was observed for VO2-on-sapphire substrate, and ~413 K for VO2-on-SiO2/Si substrate. The electrical characterizations agreed with the concurrent Raman characterization on the phase transition temperatures. However, the transition temperature appeared to be sensitive to the sample’s environment including whether electrical contacts were present. On further characterizing the samples at a fixed temperature of 355 K with varying pressure levels (controlled by switching on and off the vacuum pump), we observed that both batches of samples showed reversible transitions between VO2(M1) under vacuum and VO2(R) under ambient condition. The electrical resistance measured of the monoclinic phase was also found to be higher under vacuum than under ambient conditions.The causes of the present results are under investigation and may lead to newer experimental and theoretical studies. Such VO2 thin films may also find applications in realizing sensors, modulators, sensors, switches operating at higher temperatures with enhanced configurability."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Systematic Characterization of Anomalously High Phase Transition Temperature In VO2 Thin Film Under Vacuum"]}]}],"canonical_facts":{"dc:contributor":["Liu, Peter","Electrical Engineering"],"dc:creator":["Palit, Anwesha"],"dc:date":["2019-04-04T20:31:11Z","2019","2019-01-10 17:21:28"],"dc:description":["M.S.","Vanadium Dioxide (VO2) is a unique material, known for its phase transition from a low-temperature insulator or monoclinic phase (VO2(M1)) to high temperature metallic or rutile phase (VO2(R)) at ~340 K along with an increase in its conductivity by orders of magnitude. This makes it useful in various applications such as optical switching, detection, memory storage, sensors and smart window coatings. In this work, we attempt to study the behaviour of VO2 thin films under vacuum using Raman spectroscopy and electrical characterization. To affirm our findings, we measured several samples prepared by different groups on different substrates using different preparation methods. Our observations hold true for all the samples studied. Under ambient conditions, we observed a normal phase transition temperature at ~340 K for the samples, however under vacuum, a high phase transition temperature of approximately ~420 K was observed for VO2-on-sapphire substrate, and ~413 K for VO2-on-SiO2/Si substrate. The electrical characterizations agreed with the concurrent Raman characterization on the phase transition temperatures. However, the transition temperature appeared to be sensitive to the sample’s environment including whether electrical contacts were present. On further characterizing the samples at a fixed temperature of 355 K with varying pressure levels (controlled by switching on and off the vacuum pump), we observed that both batches of samples showed reversible transitions between VO2(M1) under vacuum and VO2(R) under ambient condition. The electrical resistance measured of the monoclinic phase was also found to be higher under vacuum than under ambient conditions.The causes of the present results are under investigation and may lead to newer experimental and theoretical studies. Such VO2 thin films may also find applications in realizing sensors, modulators, sensors, switches operating at higher temperatures with enhanced configurability."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/10477/79383"],"dc:language":["eng"],"dc:publisher":["State University of New York at Buffalo"],"dc:rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"dc:subject":["electrical engineering"],"dc:title":["Systematic Characterization of Anomalously High Phase Transition Temperature In VO2 Thin Film Under Vacuum"],"dc:type":["Text","Thesis"]},"updated_at":"2026-07-27T19:05:16Z"}