{"id":{"repo_id":"buffalo","oai_identifier":"oai:ubir.buffalo.edu:10477/79331"},"canonical_url":"https://search.dev.ndltd.org/etd/buffalo/oai:ubir.buffalo.edu:10477/79331","repository":{"repo_id":"buffalo","name":"Buffalo","base_url":"https://ubir.buffalo.edu/oai/request"},"display":{"title":"Ab-Initio Study of the Effects of Stress on the Low Field Electron Mobility in Beta-Gallium Oxide","abstract":"M.S.","abstract_html":"M.S.","abstract_has_math":false,"creators":["Sharma, Ankit"],"institution":"State University of New York at Buffalo","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Singisetti, Uttam","Electrical Engineering"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2019,"date_issued":"2019-04-04T20:30:22Z","date_published":"2019-04-04T20:30:22Z","updated_at":"2026-07-27T19:05:14Z","subjects":["materials science"],"languages":["eng"],"rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10477/79331","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Singisetti, Uttam","Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Sharma, Ankit"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2019-04-04T20:30:22Z","2019","2018-07-25 11:13:03"]},{"key":"dc:publisher","label":"Institution","values":["State University of New York at Buffalo"]},{"key":"dc:type","label":"Dc Type","values":["Text","Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["materials science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/10477/79331"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["M.S.","Beta-Gallium Oxide is a promising wide bandgap material with the potential to replace Silicon Carbide and Gallium Nitride as the preferred material for high power electronic devices. Even though it has a high breakdown field strength, it suffers from low electron mobility under low applied electric fields due to the large polar optical phonon scattering. This work is an attempt to improve the electron mobility by suppressing the dominant polar optical scattering phonon mode. To achieve this, the system is stressed in the three crystal axis directions and its effect on the scattering rates and electron mobilities is analyzed using ab-initio approach. Density functional theory is used to calculate the electronic structure and the lattice dynamical properties under different stressed crystal configuration and the Boltzmann transport theory based approach is used to calculate perturbation in the distribution function and mobilities. The most preferred crystal configuration and the direction for highest mobility is also estimated in this calculation which can guide better design of beta-Gallium Oxide based devices."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Ab-Initio Study of the Effects of Stress on the Low Field Electron Mobility in Beta-Gallium Oxide"]}]}],"canonical_facts":{"dc:contributor":["Singisetti, Uttam","Electrical Engineering"],"dc:creator":["Sharma, Ankit"],"dc:date":["2019-04-04T20:30:22Z","2019","2018-07-25 11:13:03"],"dc:description":["M.S.","Beta-Gallium Oxide is a promising wide bandgap material with the potential to replace Silicon Carbide and Gallium Nitride as the preferred material for high power electronic devices. Even though it has a high breakdown field strength, it suffers from low electron mobility under low applied electric fields due to the large polar optical phonon scattering. This work is an attempt to improve the electron mobility by suppressing the dominant polar optical scattering phonon mode. To achieve this, the system is stressed in the three crystal axis directions and its effect on the scattering rates and electron mobilities is analyzed using ab-initio approach. Density functional theory is used to calculate the electronic structure and the lattice dynamical properties under different stressed crystal configuration and the Boltzmann transport theory based approach is used to calculate perturbation in the distribution function and mobilities. The most preferred crystal configuration and the direction for highest mobility is also estimated in this calculation which can guide better design of beta-Gallium Oxide based devices."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/10477/79331"],"dc:language":["eng"],"dc:publisher":["State University of New York at Buffalo"],"dc:rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"dc:subject":["materials science"],"dc:title":["Ab-Initio Study of the Effects of Stress on the Low Field Electron Mobility in Beta-Gallium Oxide"],"dc:type":["Text","Thesis"]},"updated_at":"2026-07-27T19:05:14Z"}