{"id":{"repo_id":"buffalo","oai_identifier":"oai:ubir.buffalo.edu:10477/77965"},"canonical_url":"https://search.dev.ndltd.org/etd/buffalo/oai:ubir.buffalo.edu:10477/77965","repository":{"repo_id":"buffalo","name":"Buffalo","base_url":"https://ubir.buffalo.edu/oai/request"},"display":{"title":"Physically Unclonable Functions based on Voltage Divider Arrays of MOSFETs in Subthreshold Region of Operation","abstract":"M.S.","abstract_html":"M.S.","abstract_has_math":false,"creators":["Bahudhanam Venkatasubramaniyan, Aishwarya; 0000-0003-1970-0798"],"institution":"State University of New York at Buffalo","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Sanyal, Arindam","Electrical Engineering"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-06-28T20:31:50Z","date_published":"2018-06-28T20:31:50Z","updated_at":"2026-07-27T19:05:05Z","subjects":["electrical engineering"],"languages":["eng"],"rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10477/77965","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Sanyal, Arindam","Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Bahudhanam Venkatasubramaniyan, Aishwarya; 0000-0003-1970-0798"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018-06-28T20:31:50Z","2018","2018-04-20 19:40:48"]},{"key":"dc:publisher","label":"Institution","values":["State University of New York at Buffalo"]},{"key":"dc:type","label":"Dc Type","values":["Text","Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["electrical engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/10477/77965"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["M.S.","In this thesis, a novel architecture of a simple, low energy silicon physically unclonable function (PUF) for the purpose of device authentication is proposed. The physically unclonable function proposed is a voltage divider array of MOSFETs operating in the subthreshold region of operation. This design aims to improve the energy efficiency when compared to the previously published designs. This structure is a strong silicon PUF with 260 challenge response pairs and consumes 0.48pJ/bit of energy only. The measured inter hamming distance is 0.4982 and intra hamming distance is 0.0225. The circuits are designed in TSMC 65nm technology using Cadence software and the computations and interpretations is done using MATLAB."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Physically Unclonable Functions based on Voltage Divider Arrays of MOSFETs in Subthreshold Region of Operation"]}]}],"canonical_facts":{"dc:contributor":["Sanyal, Arindam","Electrical Engineering"],"dc:creator":["Bahudhanam Venkatasubramaniyan, Aishwarya; 0000-0003-1970-0798"],"dc:date":["2018-06-28T20:31:50Z","2018","2018-04-20 19:40:48"],"dc:description":["M.S.","In this thesis, a novel architecture of a simple, low energy silicon physically unclonable function (PUF) for the purpose of device authentication is proposed. The physically unclonable function proposed is a voltage divider array of MOSFETs operating in the subthreshold region of operation. This design aims to improve the energy efficiency when compared to the previously published designs. This structure is a strong silicon PUF with 260 challenge response pairs and consumes 0.48pJ/bit of energy only. The measured inter hamming distance is 0.4982 and intra hamming distance is 0.0225. The circuits are designed in TSMC 65nm technology using Cadence software and the computations and interpretations is done using MATLAB."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/10477/77965"],"dc:language":["eng"],"dc:publisher":["State University of New York at Buffalo"],"dc:rights":["Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.","Copyright retained by author."],"dc:subject":["electrical engineering"],"dc:title":["Physically Unclonable Functions based on Voltage Divider Arrays of MOSFETs in Subthreshold Region of Operation"],"dc:type":["Text","Thesis"]},"updated_at":"2026-07-27T19:05:05Z"}