The electrical properties of pure manganese and manganese/magnesium fluoride cermet thin film resistors

Pure Mn and Mn/MgF2 cermet films (50 to 1500A thick) containing between 10 and 100 Wt % Mn have been prepared by single boat evaporation in vacuo =< 10^(-5) torr. All films studied are ohmic, and the resistivity lying between 100 µΩ-cm and 10 mΩ-cm. Within this range, the resistivity decreases non-linearly with increase in film thickness and increase in Mn content. The effect on the film resistivity of other deposition parameters, viz substrate temperature, residual gas pressure, annealing and aging are investigated. The structure of the films was investigated using X-ray diffraction and transmission electron microscopy. Films with negative TCR have low activation energies (~ 1 to 100 meV) in the temperature range 110 to 720K, and the electronic conduction mechanism in these films is probably electron tunnelling and/or percolation depending on film composition, thickness and annealing temperature.

Grantor dc:publisher

Brunel University School of Engineering and Design PhD Theses

Year dc:date.issued

1977

Author dc:creator

• Olumekor, Louis

Advisors dc:contributor.advisor

• Beynon, JH
• Hogarth, CA

Language dc:language.iso

en

Repository record dc:identifier.uri

http://bura.brunel.ac.uk/handle/2438/7296

OAI identifier oai:identifier

oai:bura.brunel.ac.uk:2438/7296