{"id":{"repo_id":"brunel","oai_identifier":"oai:bura.brunel.ac.uk:2438/5347"},"canonical_url":"https://search.dev.ndltd.org/etd/brunel/oai:bura.brunel.ac.uk:2438/5347","repository":{"repo_id":"brunel","name":"University of Brunel","base_url":"https://bura.brunel.ac.uk/oai/request"},"display":{"title":"A study of the turn-on mechanisms in thyristors","abstract":"Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.","abstract_html":"Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.","abstract_has_math":false,"creators":["Yan, William Fong"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Hogarth, CA","Fulop, W"],"committee_chairs":[],"committee_members":[],"year":1975,"date_issued":"1975","date_published":"1975","updated_at":"2026-07-24T01:23:26Z","subjects":["Plasma spreading velocity","Signal current","Gain value","n-p-n transistor","Turning-on area"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://bura.brunel.ac.uk/handle/2438/5347","outbound_label":"Repository record","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Hogarth, CA","Fulop, W"]},{"key":"dc:creator","label":"Author","values":["Yan, William Fong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2011-06-20T15:05:14Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2011-06-20T15:05:14Z"]},{"key":"dc:date.issued","label":"Date","values":["1975"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Plasma spreading velocity","Signal current","Gain value","n-p-n transistor","Turning-on area"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://bura.brunel.ac.uk/handle/2438/5347"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University."]},{"key":"dc:description.abstract","label":"Abstract","values":["Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors."]},{"key":"dc:title","label":"Title","values":["A study of the turn-on mechanisms in thyristors"]}]}],"canonical_facts":{"dc:contributor.advisor":["Hogarth, CA","Fulop, W"],"dc:creator":["Yan, William Fong"],"dc:date.accessioned":["2011-06-20T15:05:14Z"],"dc:date.available":["2011-06-20T15:05:14Z"],"dc:date.issued":["1975"],"dc:description":["This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University."],"dc:description.abstract":["Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors."],"dc:identifier.uri":["http://bura.brunel.ac.uk/handle/2438/5347"],"dc:language.iso":["en"],"dc:subject":["Plasma spreading velocity","Signal current","Gain value","n-p-n transistor","Turning-on area"],"dc:title":["A study of the turn-on mechanisms in thyristors"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T01:23:26Z"}