{"id":{"repo_id":"birmingham","oai_identifier":"oai:etheses.bham.ac.uk:783"},"canonical_url":"https://search.dev.ndltd.org/etd/birmingham/oai:etheses.bham.ac.uk:783","repository":{"repo_id":"birmingham","name":"University of Birmingham","base_url":"https://etheses.bham.ac.uk/cgi/oai2"},"display":{"title":"Structural, electrical and optical properties of transparent conducting Si-doped ZnO thin films grown by pulsed laser deposition","abstract":"Thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon. The rotating target was irradiated at low ambient oxygen pressures by a KrF Excimer laser (Lambda physics LPX 300) emitting pulses of 0.18 ns in length, with frequency of 10 Hz, at a wavelength of 248 nm and with energy fluence of 1-2 J/cm2. The temperature of the substrate was changed from room temperature to 500˚C at the fixed oxygen pressure of 5 mTorr. The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%.","abstract_html":"Thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon. The rotating target was irradiated at low ambient oxygen pressures by a KrF Excimer laser (Lambda physics LPX 300) emitting pulses of 0.18 ns in length, with frequency of 10 Hz, at a wavelength of 248 nm and with energy fluence of 1-2 J/cm2. The temperature of the substrate was changed from room temperature to 500˚C at the fixed oxygen pressure of 5 mTorr. The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%.","abstract_has_math":false,"creators":["Fereshteh Saniee, Nessa"],"institution":"University of Birmingham","degree_name":"m_ph","degree_level":"m_ph","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-07","date_published":"2010-07","updated_at":"2026-07-24T01:11:10Z","subjects":["TN Mining engineering. Metallurgy"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.sponsor","label":"Sponsor","values":["na"]},{"key":"dc:creator","label":"Author","values":["Fereshteh Saniee, Nessa"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-07"]},{"key":"dc:date.issued","label":"Date","values":["2010-07"]},{"key":"dc:publisher.department","label":"Dc Publisher Department","values":["College of Engineering & Physical Sciences","School of Metallurgy and Materials"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Birmingham"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["http://etheses.bham.ac.uk//id/eprint/783/"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["m_ph"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["m_ph"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["TN Mining engineering. 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The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Structural, electrical and optical properties of transparent conducting Si-doped ZnO thin films grown by pulsed laser deposition"]}]}],"canonical_facts":{"dc:contributor.sponsor":["na"],"dc:creator":["Fereshteh Saniee, Nessa"],"dc:date":["2010-07"],"dc:date.issued":["2010-07"],"dc:description.abstract":["Thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon. The rotating target was irradiated at low ambient oxygen pressures by a KrF Excimer laser (Lambda physics LPX 300) emitting pulses of 0.18 ns in length, with frequency of 10 Hz, at a wavelength of 248 nm and with energy fluence of 1-2 J/cm2. The temperature of the substrate was changed from room temperature to 500˚C at the fixed oxygen pressure of 5 mTorr. The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%."],"dc:format":["application/pdf"],"dc:identifier.uri":["http://etheses.bham.ac.uk//id/eprint/783/1/Fereshteh10MPhil.pdf","http://etheses.bham.ac.uk//id/eprint/783/2/Decl_IS_Fereshteh10MPhil.pdf"],"dc:publisher.department":["College of Engineering & Physical Sciences","School of Metallurgy and Materials"],"dc:publisher.institution":["University of Birmingham"],"dc:relation.isreferencedby":["http://etheses.bham.ac.uk//id/eprint/783/"],"dc:subject":["TN Mining engineering. Metallurgy"],"dc:title":["Structural, electrical and optical properties of transparent conducting Si-doped ZnO thin films grown by pulsed laser deposition"],"dc:type":["Thesis"],"dc:type.qualificationlevel":["m_ph"],"dc:type.qualificationname":["m_ph"]},"updated_at":"2026-07-24T01:11:10Z"}