{"id":{"repo_id":"birmingham","oai_identifier":"oai:etheses.bham.ac.uk:1333"},"canonical_url":"https://search.dev.ndltd.org/etd/birmingham/oai:etheses.bham.ac.uk:1333","repository":{"repo_id":"birmingham","name":"University of Birmingham","base_url":"https://etheses.bham.ac.uk/cgi/oai2"},"display":{"title":"Novel resist materials for next generation lithography","abstract":"Fullerene derivatives have been demonstrated as negative-tone resists for electron beam lithography with impressive capability for high resolution and high plasma etching resistance, due to their carbon-rich nature. Their primary drawback of extremely poor sensitivity has been addressed by implementation of chemical amplification. A three-component chemically amplified negative-tone resist has been developed via the addition of a photoacid generator and a crosslinker to a fullerene derivative. This thesis work presents a significant extension of the previous work. The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. Their lithographic capability is evaluated and discussed.","abstract_html":"Fullerene derivatives have been demonstrated as negative-tone resists for electron beam lithography with impressive capability for high resolution and high plasma etching resistance, due to their carbon-rich nature. Their primary drawback of extremely poor sensitivity has been addressed by implementation of chemical amplification. A three-component chemically amplified negative-tone resist has been developed via the addition of a photoacid generator and a crosslinker to a fullerene derivative. This thesis work presents a significant extension of the previous work. The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. Their lithographic capability is evaluated and discussed.","abstract_has_math":false,"creators":["Manyam, Jedsada"],"institution":"University of Birmingham","degree_name":"d_ph","degree_level":"d_ph","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07","date_published":"2011-07","updated_at":"2026-07-24T01:11:29Z","subjects":["TK Electrical engineering. 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This thesis work presents a significant extension of the previous work. The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. 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The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. 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