Hydrogen evolution and transport in semiconductors
type: CreativeWork
description: Silicon-on-insulator structures are used for the fabrication of integrated electronic circuits, photonic devices and structures, and micro-electro-mechanical systems. The most common fabrication method for SOI is a hydrogen-induced cleavage technique in which ion-implanted hydrogen is employed to initiate and propagate cracks in a plane parallel to the silicon surface. Considerable research effort has been devoted to understanding this cleavage technique in (100) silicon but several fundamental issues remain unclear, including the role of stress on hydrogen platelet alignment. In addition, there is keen interest in extending the technique to other silicon orientations (i.e. (110) and (111)) and semiconductor materials (e.g. Ge). The intrinsic behaviour of hydrogen ion-implanted into Ge and Si was examined by ion beam analysis, optical profilometry and microscopy, to establish the influence of lattice damage and hydrogen evolution. In particular, hydrogen-induced blistering and crater formation under thermal annealing from T=300-650 degrees Celsius was studied to determine the activation energies in Ge and Si in several crystalline orientations. Similar techniques were employed as the influence of extrinsic applied stresses upon hydrogen's evolution within Si was studied, by mechanical stress application onto Si(100). XTEM was used to study the defect evolution related to the hydrogen and ion-implantation damage under anneals applied to samples under stress, in addition to samples produced in different stress conditions. Blistering rate and areal density was seen to follow logistic sigmoidal functions in all materials. Constant activation energies were measured for all Si samples under selected implantation conditions, but multiple activation energies were found in each Ge sample when the conditions were varied. Si(100) & Si(111) both blistered readily for all temperatures, Si(110) required higher H fluence and Ge showed inconsistent behaviour at different implantati…
abstract: Silicon-on-insulator structures are used for the fabrication of integrated electronic circuits, photonic devices and structures, and micro-electro-mechanical systems. The most common fabrication method for SOI is a hydrogen-induced cleavage technique in which ion-implanted hydrogen is employed to initiate and propagate cracks in a plane parallel to the silicon surface. Considerable research effort has been devoted to understanding this cleavage technique in (100) silicon but several fundamental issues remain unclear, including the role of stress on hydrogen platelet alignment. In addition, there is keen interest in extending the technique to other silicon orientations (i.e. (110) and (111)) and semiconductor materials (e.g. Ge). The intrinsic behaviour of hydrogen ion-implanted into Ge and Si was examined by ion beam analysis, optical profilometry and microscopy, to establish the influence of lattice damage and hydrogen evolution. In particular, hydrogen-induced blistering and crater formation under thermal annealing from T=300-650 degrees Celsius was studied to determine the activation energies in Ge and Si in several crystalline orientations. Similar techniques were employed as the influence of extrinsic applied stresses upon hydrogen's evolution within Si was studied, by mechanical stress application onto Si(100). XTEM was used to study the defect evolution related to the hydrogen and ion-implantation damage under anneals applied to samples under stress, in addition to samples produced in different stress conditions. Blistering rate and areal density was seen to follow logistic sigmoidal functions in all materials. Constant activation energies were measured for all Si samples under selected implantation conditions, but multiple activation energies were found in each Ge sample when the conditions were varied. Si(100) & Si(111) both blistered readily for all temperatures, Si(110) required higher H fluence and Ge showed inconsistent behaviour at different implantati…
author: Pyke, Daniel James
language: en_AU
date published: 2014
date modified: 2026-07-24T01:07:40Z
provider: Australian Catholic University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Canberra, ACT : The Australian National University

PropertyValue
property ID: Handle
value: http://hdl.handle.net/1885/125142