Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and inaccurately reported parameters.
To maintain the progress of the GeSn material development toward replacing the group III-V semiconductors in the optoelectronics industry, high-resolution spectroscopy with high SNR are necessary to accurately determine the unknowns in the GeSn growth conditions, device fabrication, and material development. In this work, PL and EL characterization systems were designed, built, and aligned using a Bruker Fourier transform infrared (FTIR) set up to collect the emission from fabricated GeSn samples using an external source with an external photodetector.
This thesis presents an optical setup of a Bruker FTIR spectrometer aligned with external optical components and external light sources (532 nm laser and 1064 nm laser) to achieve high-resolution spectroscopy with high SNR. The setup employs the use of OPUS operational software for controlling the components of the FTIR hardware and a LabVIEW program for controlling all motorized devices on the external optical bench. An indium antimonide (InSb) external photodetector was used with the FTIR for a wider spectral range detection. Finally, a step-scan mode of operation which required both lock-in and a chopper was used to measure various GeSn bulk and laser samples at high resolution. The results obtained from these characterizations demonstrate a high SNR spectrum compared to a dispersive spectrometer.
","abstract_html":"<p>Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and inaccurately reported parameters.</p> <p>To maintain the progress of the GeSn material development toward replacing the group III-V semiconductors in the optoelectronics industry, high-resolution spectroscopy with high SNR are necessary to accurately determine the unknowns in the GeSn growth conditions, device fabrication, and material development. In this work, PL and EL characterization systems were designed, built, and aligned using a Bruker Fourier transform infrared (FTIR) set up to collect the emission from fabricated GeSn samples using an external source with an external photodetector.</p> <p>This thesis presents an optical setup of a Bruker FTIR spectrometer aligned with external optical components and external light sources (532 nm laser and 1064 nm laser) to achieve high-resolution spectroscopy with high SNR. The setup employs the use of OPUS operational software for controlling the components of the FTIR hardware and a LabVIEW program for controlling all motorized devices on the external optical bench. An indium antimonide (InSb) external photodetector was used with the FTIR for a wider spectral range detection. Finally, a step-scan mode of operation which required both lock-in and a chopper was used to measure various GeSn bulk and laser samples at high resolution. The results obtained from these characterizations demonstrate a high SNR spectrum compared to a dispersive spectrometer.</p>","abstract_has_math":false,"creators":["Ojo, Solomon Opeyemi"],"institution":null,"degree_name":"Master of Science in Microelectronics-Photonics (MS)","degree_level":"Thesis","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Chen, Zhong","Salamo, Gregory J."],"advisors":["Yu, Shui-Qing \"Fisher\""],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-12-01T08:00:00Z","date_published":"2020-12-01T08:00:00Z","updated_at":"2026-07-24T00:58:53Z","subjects":["Electroluminescence","FTIR","GeSn","Laser","Spectroscopy","Electromagnetics and Photonics","Electronic Devices and Semiconductor Manufacturing","Semiconductor and Optical Materials"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarworks.uark.edu/etd/3901","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chen, Zhong","Salamo, Gregory J."]},{"key":"dc:contributor.advisor","label":"Advisor","values":["Yu, Shui-Qing \"Fisher\""]},{"key":"dc:creator","label":"Author","values":["Ojo, Solomon Opeyemi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2021-02-10T08:00:00Z"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Microelectronics-Photonics (MS)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electroluminescence","FTIR","GeSn","Laser","Spectroscopy","Electromagnetics and Photonics","Electronic Devices and Semiconductor Manufacturing","Semiconductor and Optical Materials"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarworks.uark.edu/etd/3901"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and inaccurately reported parameters.
To maintain the progress of the GeSn material development toward replacing the group III-V semiconductors in the optoelectronics industry, high-resolution spectroscopy with high SNR are necessary to accurately determine the unknowns in the GeSn growth conditions, device fabrication, and material development. In this work, PL and EL characterization systems were designed, built, and aligned using a Bruker Fourier transform infrared (FTIR) set up to collect the emission from fabricated GeSn samples using an external source with an external photodetector.
This thesis presents an optical setup of a Bruker FTIR spectrometer aligned with external optical components and external light sources (532 nm laser and 1064 nm laser) to achieve high-resolution spectroscopy with high SNR. The setup employs the use of OPUS operational software for controlling the components of the FTIR hardware and a LabVIEW program for controlling all motorized devices on the external optical bench. An indium antimonide (InSb) external photodetector was used with the FTIR for a wider spectral range detection. Finally, a step-scan mode of operation which required both lock-in and a chopper was used to measure various GeSn bulk and laser samples at high resolution. The results obtained from these characterizations demonstrate a high SNR spectrum compared to a dispersive spectrometer.
"]},{"key":"dc:title","label":"Title","values":["Fourier Transform Infrared Spectroscopy for the measurement of GeSn/(Si)GeSn"]}]}],"canonical_facts":{"dc:contributor":["Chen, Zhong","Salamo, Gregory J."],"dc:contributor.advisor":["Yu, Shui-Qing \"Fisher\""],"dc:creator":["Ojo, Solomon Opeyemi"],"dc:date":["2020"],"dc:date.available":["2021-02-10T08:00:00Z"],"dc:description.abstract":["Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and inaccurately reported parameters.
To maintain the progress of the GeSn material development toward replacing the group III-V semiconductors in the optoelectronics industry, high-resolution spectroscopy with high SNR are necessary to accurately determine the unknowns in the GeSn growth conditions, device fabrication, and material development. In this work, PL and EL characterization systems were designed, built, and aligned using a Bruker Fourier transform infrared (FTIR) set up to collect the emission from fabricated GeSn samples using an external source with an external photodetector.
This thesis presents an optical setup of a Bruker FTIR spectrometer aligned with external optical components and external light sources (532 nm laser and 1064 nm laser) to achieve high-resolution spectroscopy with high SNR. The setup employs the use of OPUS operational software for controlling the components of the FTIR hardware and a LabVIEW program for controlling all motorized devices on the external optical bench. An indium antimonide (InSb) external photodetector was used with the FTIR for a wider spectral range detection. Finally, a step-scan mode of operation which required both lock-in and a chopper was used to measure various GeSn bulk and laser samples at high resolution. The results obtained from these characterizations demonstrate a high SNR spectrum compared to a dispersive spectrometer.
"],"dc:identifier":["https://scholarworks.uark.edu/etd/3901"],"dc:subject":["Electroluminescence","FTIR","GeSn","Laser","Spectroscopy","Electromagnetics and Photonics","Electronic Devices and Semiconductor Manufacturing","Semiconductor and Optical Materials"],"dc:title":["Fourier Transform Infrared Spectroscopy for the measurement of GeSn/(Si)GeSn"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science in Microelectronics-Photonics (MS)"]},"updated_at":"2026-07-24T00:58:53Z"}