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University of Arkansas

A Silicon Carbide Power Management Solution for High Temperature Applications

Abstract

dc:description.abstract

<p>The increasing demand for discrete power devices capable of operating in high temperature and high voltage applications has spurred on the research of semiconductor materials with the potential of breaking through the limitations of traditional silicon. Gallium nitride (GaN) and silicon carbide (SiC), both of which are wide bandgap materials, have garnered the attention of researchers and gradually gained market share. Although these wide bandgap power devices enable more ambitious commercial applications compared to their silicon-based counterparts, reaching their potential is contingent upon developing integrated circuits (ICs) capable of operating in similar environments. </p> <p>The foundation of any electrical system is the ability to efficiently condition and supply power. The work presented in this thesis explores integrated SiC power management solutions in the form of linear regulators and switched capacitor converters. While switched-mode converters provide high efficiency, the requirement of an inductor hinders the development of a compact, integrated solution that can endure harsh operating environments. </p> <p>Although the primary research motivation for wide bandgap ICs has been to provide control and protection circuitry for power devices, the circuitry designed in this work can be incorporated in stand-alone applications as well. Battery or generator powered data acquisition systems targeted towards monitoring industrial machinery is one potential usage scenario. </p>

Degree

thesis:*
Name thesis:degree_name
Master of Science in Electrical Engineering (MSEE)
Level thesis:degree_level
Thesis
Year dc:date.available
2017

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Murphree, Robert
Advisor dc:contributor.advisor
  • Mantooth, H. Alan
Contributors dc:contributor
  • Francis, A. Matthew
  • Ang, Simon S.

Subjects

dc:subject × 7

Identifiers

dc:identifier.*
Repository record dc:identifier
https://scholarworks.uark.edu/etd/2542
OAI identifier oai:identifier
oai:scholarworks.uark.edu:etd-4091

Chain of custody

source
Harvested from
University of Arkansas
Base URL
scholarworks.uark.edu/do/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Murphree, Robert. A Silicon Carbide Power Management Solution for High Temperature Applications. Thesis thesis, 2017. https://scholarworks.uark.edu/etd/2542