Discrete Strain Engineering in Graphene

<p>Graphene has a number of fascinating mechanical and electrical properties. Strain engineering in graphene is the attempt to control its properties with mechanical strain. Previous research in this area has come up with an approach using a continuum theory to describe the strain induced gauge fields in graphene; however, this approach is only valid for small strains (5% at most). A discrete framework is being developed in Arkansas that can more accurately calculate the deformation (electrical) and (pseudo-)magnetic gauge fields created by large strains. Computational simulations were carried out and used to get discrete atomic positions for strained, suspended graphene membranes, and those coordinates were then used to accurately and discretely calculate the gauge fields. </p>

Name thesis:degree_name

Master of Science in Microelectronics-Photonics (MS)

Level thesis:degree_level

Thesis

Year dc:date.available

2014

Author dc:creator

• Horvath, Cedric Marcus

Advisor dc:contributor.advisor

• Barraza-Lopez, Salvador

Contributors dc:contributor

• Naseem, Hameed A.
• Bellaiche, Laurent

• Electrical Properties
• Graphene
• Strain Engineering
• Condensed Matter Physics
• Materials Science and Engineering

Repository record dc:identifier

https://scholarworks.uark.edu/etd/2307

OAI identifier oai:identifier

oai:scholarworks.uark.edu:etd-3846