{"id":{"repo_id":"alabama","oai_identifier":"oai:ir.ua.edu:123456789/1080"},"canonical_url":"https://search.dev.ndltd.org/etd/alabama/oai:ir.ua.edu:123456789/1080","repository":{"repo_id":"alabama","name":"University of Alabama","base_url":"https://ir-api.ua.edu/oai/request"},"display":{"title":"Half-metallic CrO_2 thin films for spintronic applications","abstract":"CrO_2 is a well-established half-metallic oxide with near perfect spin polarization - known to have the highest spin polarization among all known materials theoretically as well as experimentally. This means that the conduction electrons in CrO_2 have only one kind of spin i.e. conduction is due only to the majority spin electrons. Because of its high spin polarization, CrO_2 stands as an ideal and one of the most attractive candidates for spin-electronic applications as well as of fundamental interests. The enormous potential of CrO_2 is still untapped since thin film growth modes, interface/surface properties and various factors affecting them are not very well understood or, relatively unknown. Reported works confirm strained growth of (100) CrO_2 films and strain free growth of (110) CrO_2 films on iso-structural TiO_2 substrates investigated using X$ - $ray diffraction. Superconducting quantum interference device (SQUID) and element specific X-ray magnetic circular dichroism (XMCD) techniques were employed to investigate the effect of this substrate-induced strain on the magnetic properties of the films. Magnetic tunnel junctions (MTJ) were fabricated with CrO_2 , Cr_2 O_3 [natural oxide of Cr] as the thin insulating barrier and Co as the other ferromagnetic electrode using photolithography. I-V characteristics of this spin-electronic device are reported. Also, results on the low pressure chemical vapor deposition (CVD) growth of CrO_2 and its comparison with standard growth technique under atmospheric pressure are reported.","abstract_html":"CrO_2 is a well-established half-metallic oxide with near perfect spin polarization - known to have the highest spin polarization among all known materials theoretically as well as experimentally. This means that the conduction electrons in CrO_2 have only one kind of spin i.e. conduction is due only to the majority spin electrons. Because of its high spin polarization, CrO_2 stands as an ideal and one of the most attractive candidates for spin-electronic applications as well as of fundamental interests. The enormous potential of CrO_2 is still untapped since thin film growth modes, interface/surface properties and various factors affecting them are not very well understood or, relatively unknown. Reported works confirm strained growth of (100) CrO_2 films and strain free growth of (110) CrO_2 films on iso-structural TiO_2 substrates investigated using X$ - $ray diffraction. Superconducting quantum interference device (SQUID) and element specific X-ray magnetic circular dichroism (XMCD) techniques were employed to investigate the effect of this substrate-induced strain on the magnetic properties of the films. Magnetic tunnel junctions (MTJ) were fabricated with CrO_2 , Cr_2 O_3 [natural oxide of Cr] as the thin insulating barrier and Co as the other ferromagnetic electrode using photolithography. I-V characteristics of this spin-electronic device are reported. Also, results on the low pressure chemical vapor deposition (CVD) growth of CrO_2 and its comparison with standard growth technique under atmospheric pressure are reported.","abstract_has_math":false,"creators":["Pathak, Manjit"],"institution":"University of Alabama Libraries","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Gupta, Arunava","Mankey, Gary J.","Butler, W. H.","White, Raymond E."],"advisors":["LeClair, Patrick R."],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011","date_published":"2011","updated_at":"2026-07-27T18:44:05Z","subjects":["Condensed matter physics","Materials science"],"languages":["en_US","English"],"rights":["All rights reserved by the author unless otherwise indicated."],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["u0015_0000001_0000575","Pathak_alatus_0004D_10618"],"render_values":[{"text":"u0015_0000001_0000575","href":null,"code":true},{"text":"Pathak_alatus_0004D_10618","href":null,"code":true}]}]},"links":{"outbound_url":"https://ir.ua.edu/handle/123456789/1080","outbound_label":"Repository record","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["LeClair, Patrick R.","Gupta, Arunava","Mankey, Gary J.","Butler, W. 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This means that the conduction electrons in CrO_2 have only one kind of spin i.e. conduction is due only to the majority spin electrons. Because of its high spin polarization, CrO_2 stands as an ideal and one of the most attractive candidates for spin-electronic applications as well as of fundamental interests. The enormous potential of CrO_2 is still untapped since thin film growth modes, interface/surface properties and various factors affecting them are not very well understood or, relatively unknown. Reported works confirm strained growth of (100) CrO_2 films and strain free growth of (110) CrO_2 films on iso-structural TiO_2 substrates investigated using X$ - $ray diffraction. Superconducting quantum interference device (SQUID) and element specific X-ray magnetic circular dichroism (XMCD) techniques were employed to investigate the effect of this substrate-induced strain on the magnetic properties of the films. Magnetic tunnel junctions (MTJ) were fabricated with CrO_2 , Cr_2 O_3 [natural oxide of Cr] as the thin insulating barrier and Co as the other ferromagnetic electrode using photolithography. I-V characteristics of this spin-electronic device are reported. Also, results on the low pressure chemical vapor deposition (CVD) growth of CrO_2 and its comparison with standard growth technique under atmospheric pressure are reported."]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["electronic"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Half-metallic CrO_2 thin films for spintronic applications"]}]}],"canonical_facts":{"dc:contributor":["LeClair, Patrick R.","Gupta, Arunava","Mankey, Gary J.","Butler, W. H.","White, Raymond E."],"dc:contributor.advisor":["LeClair, Patrick R."],"dc:contributor.other":["University of Alabama Tuscaloosa"],"dc:creator":["Pathak, Manjit"],"dc:date.accessioned":["2017-03-01T14:40:02Z"],"dc:date.available":["2017-03-01T14:40:02Z"],"dc:date.issued":["2011"],"dc:description":["Electronic Thesis or Dissertation"],"dc:description.abstract":["CrO_2 is a well-established half-metallic oxide with near perfect spin polarization - known to have the highest spin polarization among all known materials theoretically as well as experimentally. This means that the conduction electrons in CrO_2 have only one kind of spin i.e. conduction is due only to the majority spin electrons. Because of its high spin polarization, CrO_2 stands as an ideal and one of the most attractive candidates for spin-electronic applications as well as of fundamental interests. The enormous potential of CrO_2 is still untapped since thin film growth modes, interface/surface properties and various factors affecting them are not very well understood or, relatively unknown. Reported works confirm strained growth of (100) CrO_2 films and strain free growth of (110) CrO_2 films on iso-structural TiO_2 substrates investigated using X$ - $ray diffraction. Superconducting quantum interference device (SQUID) and element specific X-ray magnetic circular dichroism (XMCD) techniques were employed to investigate the effect of this substrate-induced strain on the magnetic properties of the films. Magnetic tunnel junctions (MTJ) were fabricated with CrO_2 , Cr_2 O_3 [natural oxide of Cr] as the thin insulating barrier and Co as the other ferromagnetic electrode using photolithography. I-V characteristics of this spin-electronic device are reported. Also, results on the low pressure chemical vapor deposition (CVD) growth of CrO_2 and its comparison with standard growth technique under atmospheric pressure are reported."],"dc:format.medium":["electronic"],"dc:format.mimetype":["application/pdf"],"dc:identifier.other":["u0015_0000001_0000575","Pathak_alatus_0004D_10618"],"dc:identifier.uri":["https://ir.ua.edu/handle/123456789/1080"],"dc:language":["English"],"dc:language.iso":["en_US"],"dc:publisher":["University of Alabama Libraries"],"dc:rights":["All rights reserved by the author unless otherwise indicated."],"dc:subject":["Condensed matter physics","Materials science"],"dc:title":["Half-metallic CrO_2 thin films for spintronic applications"],"dc:type":["thesis","text"]},"updated_at":"2026-07-27T18:44:05Z"}