Application and analysis of the constant photocurrent method in studies on amorphous silicon and other thin-film semiconductors
type: CreativeWork
description: The opto-electronic properties of amorphous hydrogenated silicon films (a-Si:H) produced by plasma enhanced chemical vapour deposition (PECVD) in a commercial reactor and hot-wire chemical vapour deposition (HWCVD) in a laboratory setup, are subject to light-soaking and annealing and investigated using transient photoconductivity (TPC) and constant photocurrent (CPM) measurements. As a result it is to be found thatthe HWCVD produced material is competitive with the commercially produced PECVD material and shows a tendency to be more resistant against light-soaking as long as significant contamination does not occur in the deposition process.Depth profiling by chemical etching and correlation of infrared spectroscopy (FTIR) and CPM results are used to analyse the effect of oxygen and carbon contamination on the photoelectrical properties of a-Si:H material deposited using HWCVD method. It is shown how changing dissociation processes at the heated wire surface, surrounded by silane gas, affect the electronic and structural properties of the a-Si:H material produced. The optimum growth of a-Si:H material by HWCVD depends very much on the ‘substrate to filament’ distance, investigated by steady-state conductivity and CPM measurements. It is found that this has a big influence on the optoelectronic properties of the film and on the uniformity of film thickness, which is important for designing large area industrial HWCVD deposition units.The influence of the silane content (SC) (silane concentration in hydrogen) during the deposition process, in HWCVD and PECVD technique, on the film properties were investigated using CPM and FTIR measurement methods. From correlation between CPM and FTIR results it is shown that for low silane content (< 10%) the structure of the resulting material is predominately microcrystalline (pc-Si:H) and amorphous for highsilane content.Proton irradiation effects on undoped a-Si:H and pc-Si:H samples from PECVD and HWCVD deposition method were i…
abstract: The opto-electronic properties of amorphous hydrogenated silicon films (a-Si:H) produced by plasma enhanced chemical vapour deposition (PECVD) in a commercial reactor and hot-wire chemical vapour deposition (HWCVD) in a laboratory setup, are subject to light-soaking and annealing and investigated using transient photoconductivity (TPC) and constant photocurrent (CPM) measurements. As a result it is to be found thatthe HWCVD produced material is competitive with the commercially produced PECVD material and shows a tendency to be more resistant against light-soaking as long as significant contamination does not occur in the deposition process.Depth profiling by chemical etching and correlation of infrared spectroscopy (FTIR) and CPM results are used to analyse the effect of oxygen and carbon contamination on the photoelectrical properties of a-Si:H material deposited using HWCVD method. It is shown how changing dissociation processes at the heated wire surface, surrounded by silane gas, affect the electronic and structural properties of the a-Si:H material produced. The optimum growth of a-Si:H material by HWCVD depends very much on the ‘substrate to filament’ distance, investigated by steady-state conductivity and CPM measurements. It is found that this has a big influence on the optoelectronic properties of the film and on the uniformity of film thickness, which is important for designing large area industrial HWCVD deposition units.The influence of the silane content (SC) (silane concentration in hydrogen) during the deposition process, in HWCVD and PECVD technique, on the film properties were investigated using CPM and FTIR measurement methods. From correlation between CPM and FTIR results it is shown that for low silane content (< 10%) the structure of the resulting material is predominately microcrystalline (pc-Si:H) and amorphous for highsilane content.Proton irradiation effects on undoped a-Si:H and pc-Si:H samples from PECVD and HWCVD deposition method were i…
author: Zrinscak, Ivica
language: eng
date published: 2005-6
date modified: 2026-07-24T00:50:16Z
provider: Abertay University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Abertay Dundee