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Abertay University

The electronic transport properties of undoped and doped arsenic triselenide

Abstract

dc:description.abstract

The electronic and transport properties of doped and undoped arsenic triselenide have been characterised in an extensive study. Measurement of optical absorption, d.c, conductivity, thermoelectric power and fast charge transient photoconductivity were made. In addition, an improved time of flight technique and a modulated steady state photocurrent experiment were developed.<br/><br/>Results obtained from undoped, vitreous, evaporated and sputtered samples were explained on the basis of a multiple trapping transport model with trap levels E<sub>2</sub> (0.62eV) and E<sub>3</sub> (0.42eV) above the valence band edge.<br/><br/>Variation of the dispersion parameter with temperature in vitreous material supports the presence of structure at E<sub>2</sub> in the distribution of localised states N(E). Deviations from power law behaviour in the transient photodecay also suggest a structured N(E) and a computer simulation of the thermalisation process was developed in order to obtain N(E) from the data. For sputtered material a feature incorporated at E<sub>3</sub> in a continuous tail of states gave the the best fit to the data. Determination of N(E) using two other recently developed spectroscopic techniques also gave excellent agreement in the energy position E<sub>3</sub>.<br/><br/>The spectroscopic analysis offered a new technique for obtaining values of the capture coefficient C and offers the possibility of obtaining the energy dependence of C (if any). <br/><br/>In nickel doped specimens the Fermi-level was shifted by as much as 0.6eV, the conductivity increased by 11 orders of magnitude and n-type conduction, rarely seen in chalcogenides, observed. These unique findings were explained by inclusion of an acceptor level (E<sub>4 </sub>0.22eV), introduced by nickel, into the intrinsic model density of states.<br/><br/>Results obtained when incorporating indium infer a shift in the valence band edge by 0.03 eV rather than a shift of the Fermi-level. A decrease in the trap density at E<sub>3</sub> with increasing indium content is also inferred.

Degree

thesis:*
Name dc:type.qualificationname
PhD
Level dc:type.qualificationlevel
Doctoral Thesis
Year dc:date.issued
1985

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Barclay, Raymond

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
oai:rke.abertay.ac.uk:studenttheses/09e71ffc-f56b-4202-b247-61d95a1b5048
OAI identifier oai:identifier
oai:rke.abertay.ac.uk:studenttheses/09e71ffc-f56b-4202-b247-61d95a1b5048

Chain of custody

source
Harvested from
Abertay University
Base URL
rke.abertay.ac.uk/ws/oai
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
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citation

Barclay, Raymond. The electronic transport properties of undoped and doped arsenic triselenide. Doctoral Thesis thesis, 1985. https://rke.abertay.ac.uk/en/studentTheses/09e71ffc-f56b-4202-b247-61d95a1b5048