Integration of resistive switching devices in crossbar structures
type: CreativeWork
description: Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F² (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO2, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in te…
abstract: Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F² (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO2, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in te…
author: Nauenheim, Christian
language: eng
keywords: info:eu-repo/classification/ddc/620, Nichtflüchtiger Speicher, Titandioxid, Ingenieurwissenschaften, resistives Schalten, Kreuzungspunktarchitektur, Speichermatrix, funktionelles Material, resistive switching, crossbar architecture, nonvolatile memory, functional material, titanium dioxide
date published: 2010
date modified: 2026-07-30T19:43:35Z
provider: RWTH Aachen University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Forschungszentrum Jülich, Zentralbibliothek