Template-controlled integration and characterization of bottom-up grown ferroelectric nanoislands
type: CreativeWork
description: The tremendous progress in thin-film processing has opened up an exciting new field of applications for ferroelectric materials in information and semiconductor technology today. Exemplarily, the development of the Ferroelectric Random Access Memory (FeRAM) was enabled, which uses the spontaneous polarization of ferroelectric thin-films to store digital information non-volatile. Beyond, ferroelectric films are likewise employed due to their outstanding dielectric, piezoelectric and pyroelectric properties. The prospective success of any of these technologies will first and foremost depend on their potential to fulfill the markets requirement for ever growing integration densities. The scalability of ferroelectric materials however is still under discussion and therefore subject to various research projects. Size-effects in real systems are expected to be often rather extrinsically determined by technological issues like processing induced damage and boundary conditions than intrinsically. The general question arises, how ferroelectric nanostructures can be processed with Gbit integration densities for future devices without deteriorating their physical properties. In addition, electrical characterization of these structures is hampered as the electric charge to detect scales with lateral cell dimension. A surface charge of a 100 nm2 capacitor that features a 30 µC/cm2 polarization is compensated by merely 180 electrons for example. Hence, ferroelectricity of capacitors below 200 x 200 nm2 in lateral dimensions was so far only shown qualitatively and indirectly via their piezoelectric properties. In the framework of this thesis, bottom-up grown ferroelectric lead titanate (PTO) nanoislands are studied in terms of their potential for integration and electrical characterization. The production method applied is based on Chemical Solution Deposition (CSD) which is especially suited as it features a non-destructive, parallel processing of smallest ferroelectric nanostruc…
abstract: The tremendous progress in thin-film processing has opened up an exciting new field of applications for ferroelectric materials in information and semiconductor technology today. Exemplarily, the development of the Ferroelectric Random Access Memory (FeRAM) was enabled, which uses the spontaneous polarization of ferroelectric thin-films to store digital information non-volatile. Beyond, ferroelectric films are likewise employed due to their outstanding dielectric, piezoelectric and pyroelectric properties. The prospective success of any of these technologies will first and foremost depend on their potential to fulfill the markets requirement for ever growing integration densities. The scalability of ferroelectric materials however is still under discussion and therefore subject to various research projects. Size-effects in real systems are expected to be often rather extrinsically determined by technological issues like processing induced damage and boundary conditions than intrinsically. The general question arises, how ferroelectric nanostructures can be processed with Gbit integration densities for future devices without deteriorating their physical properties. In addition, electrical characterization of these structures is hampered as the electric charge to detect scales with lateral cell dimension. A surface charge of a 100 nm2 capacitor that features a 30 µC/cm2 polarization is compensated by merely 180 electrons for example. Hence, ferroelectricity of capacitors below 200 x 200 nm2 in lateral dimensions was so far only shown qualitatively and indirectly via their piezoelectric properties. In the framework of this thesis, bottom-up grown ferroelectric lead titanate (PTO) nanoislands are studied in terms of their potential for integration and electrical characterization. The production method applied is based on Chemical Solution Deposition (CSD) which is especially suited as it features a non-destructive, parallel processing of smallest ferroelectric nanostruc…
author: Clemens, Sven
language: eng
keywords: info:eu-repo/classification/ddc/620, Ferroelektrikum, Informationstechnik, Nanostruktur, Low-k-Dielektrikum, Dreidimensionale Integration, Speicherdichte, Ingenieurwissenschaften, additives Wachstum, Nanostrukturierung, ferroelectric, integration density, bottom-up growth, nanostructures, low-k-dielectric
date published: 2009
date modified: 2026-07-30T19:43:35Z
provider: RWTH Aachen University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Publikationsserver der RWTH Aachen University