Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides
type: CreativeWork
description: Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 mOhm cm for undoped tin oxide without any post-deposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO2. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post-deposition annealing the suit…
abstract: Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 mOhm cm for undoped tin oxide without any post-deposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO2. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post-deposition annealing the suit…
author: Boltz, Janika
language: eng
keywords: info:eu-repo/classification/ddc/530, Dünne Schicht, Zinnoxid <Zinn(II)-oxid>, Zinndioxid, Titandioxid, Physik, transparent leitfähige Oxide, Dünnschichten, reaktive Sputter-Deposition, Zinnoxid, Zinnmonoxid, Titanoxid, SnO2, TiO2, Sn2O3 (Zinn(II,IV)-oxid), transparent conductive oxides, thin films, tin oxide, titanium oxide, reactive sputtering
date published: 2011
date modified: 2026-07-30T19:43:35Z
provider: RWTH Aachen University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Publikationsserver der RWTH Aachen University