{"id":{"repo_id":"aachen","oai_identifier":"oai:publications.rwth-aachen.de:52443"},"canonical_url":"https://search.dev.ndltd.org/etd/aachen/oai:publications.rwth-aachen.de:52443","repository":{"repo_id":"aachen","name":"RWTH Aachen University","base_url":"https://publications.rwth-aachen.de/oai2d"},"display":{"title":"Strukturbildung und Prozessstabilisierung beim reaktiven Sputtern","abstract":"Reactive sputtering is an important deposition technique for oxides or nitrides employed e.g. in optical coatings. The process is characterized by high deposition rates and compact films as a result of the kinetic energy input from the glow discharge. Nevertheless, this deposition technique suffers from several drawbacks such as a highly unstable transition regime between the metallic and compound mode which is frequently accompanied by a hysteresis. In this work calculations and a comparison with experiments show that the addition of nitrogen during reactive sputtering of oxides can lead to a tremendous stabilisation of the process and a higher deposition rate. At the same time, only small amounts of nitrogen are incorporated into the film. Furthermore, the arc formation is supressed. The nitrogen can be added either as a second reactive gas or by the use of a ceramic nitride target. The key parameter for a sucessfull deposition process with nitrogen is the reactivity of the metal and the time scale which determines the process dynamics both at the target surface and at the chamber wall. This can be tuned by variing the size of these areas. Furthermore, due to the addition of nitrogen into the discharge process, a significant fraction of the target surface usually covered with an oxide is displaced by the corresponding nitride. This leads to a reduced bombardment of the growing film with fast negatively charged oxygen ions and has a tremendous effect on the structure formation of the growing film. For instance, the control of the oxygen ions during reactive sputtering of zirconia enables to deposit amorphous, cubic or monoclinic films. In contrast, during reactive sputtering of zincoxide, any kind of bombardment with fast ions results in the destruction of the film structure. Therefore, the use of a mechanical shield yields the best quality of zincoxide. Another part of the thesis deals with the implantation of reactive gas ions below the target surface during reactive sputtering. Experimental results and a comparison with model predictions confirms that this effect can have a significant influence on the process dynamics since the effective fraction of the target covered with the compound is enhanced.","abstract_html":"Reactive sputtering is an important deposition technique for oxides or nitrides employed e.g. in optical coatings. The process is characterized by high deposition rates and compact films as a result of the kinetic energy input from the glow discharge. Nevertheless, this deposition technique suffers from several drawbacks such as a highly unstable transition regime between the metallic and compound mode which is frequently accompanied by a hysteresis. In this work calculations and a comparison with experiments show that the addition of nitrogen during reactive sputtering of oxides can lead to a tremendous stabilisation of the process and a higher deposition rate. At the same time, only small amounts of nitrogen are incorporated into the film. Furthermore, the arc formation is supressed. The nitrogen can be added either as a second reactive gas or by the use of a ceramic nitride target. The key parameter for a sucessfull deposition process with nitrogen is the reactivity of the metal and the time scale which determines the process dynamics both at the target surface and at the chamber wall. This can be tuned by variing the size of these areas. Furthermore, due to the addition of nitrogen into the discharge process, a significant fraction of the target surface usually covered with an oxide is displaced by the corresponding nitride. This leads to a reduced bombardment of the growing film with fast negatively charged oxygen ions and has a tremendous effect on the structure formation of the growing film. For instance, the control of the oxygen ions during reactive sputtering of zirconia enables to deposit amorphous, cubic or monoclinic films. In contrast, during reactive sputtering of zincoxide, any kind of bombardment with fast ions results in the destruction of the film structure. Therefore, the use of a mechanical shield yields the best quality of zincoxide. Another part of the thesis deals with the implantation of reactive gas ions below the target surface during reactive sputtering. Experimental results and a comparison with model predictions confirms that this effect can have a significant influence on the process dynamics since the effective fraction of the target covered with the compound is enhanced.","abstract_has_math":false,"creators":["Severin, Daniel"],"institution":"Publikationsserver der RWTH Aachen University","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Wuttig, Matthias"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-30T19:40:50Z","subjects":["info:eu-repo/classification/ddc/530","Physik","Sputtern","Strukturbildung","Ionenbestrahlung","Stabilisierung","Hysterese","reactive sputtering","hysteresis","process stabilisation","structure formation","ion bombardment"],"languages":["ger"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114667%22"],"render_values":[{"text":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114667%22","href":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114667%22","code":true}]}]},"links":{"outbound_url":"https://publications.rwth-aachen.de/record/52443","outbound_label":"Repository record","outbound_source":"dc:identifier"},"source_record":{"url":"https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A52443","prefix":"oai_dc"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Wuttig, Matthias"]},{"key":"dc:creator","label":"Author","values":["Severin, Daniel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:coverage","label":"Dc Coverage","values":["DE"]},{"key":"dc:date","label":"Dc Date","values":["2006"]},{"key":"dc:publisher","label":"Institution","values":["Publikationsserver der RWTH Aachen University"]},{"key":"dc:relation","label":"Dc Relation","values":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-16729"]},{"key":"dc:type","label":"Dc Type","values":["info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["info:eu-repo/classification/ddc/530","Physik","Sputtern","Strukturbildung","Ionenbestrahlung","Stabilisierung","Hysterese","reactive sputtering","hysteresis","process stabilisation","structure formation","ion bombardment"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["ger"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/record/52443","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114667%22"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Reactive sputtering is an important deposition technique for oxides or nitrides employed e.g. in optical coatings. The process is characterized by high deposition rates and compact films as a result of the kinetic energy input from the glow discharge. Nevertheless, this deposition technique suffers from several drawbacks such as a highly unstable transition regime between the metallic and compound mode which is frequently accompanied by a hysteresis. In this work calculations and a comparison with experiments show that the addition of nitrogen during reactive sputtering of oxides can lead to a tremendous stabilisation of the process and a higher deposition rate. At the same time, only small amounts of nitrogen are incorporated into the film. Furthermore, the arc formation is supressed. The nitrogen can be added either as a second reactive gas or by the use of a ceramic nitride target. The key parameter for a sucessfull deposition process with nitrogen is the reactivity of the metal and the time scale which determines the process dynamics both at the target surface and at the chamber wall. This can be tuned by variing the size of these areas. Furthermore, due to the addition of nitrogen into the discharge process, a significant fraction of the target surface usually covered with an oxide is displaced by the corresponding nitride. This leads to a reduced bombardment of the growing film with fast negatively charged oxygen ions and has a tremendous effect on the structure formation of the growing film. For instance, the control of the oxygen ions during reactive sputtering of zirconia enables to deposit amorphous, cubic or monoclinic films. In contrast, during reactive sputtering of zincoxide, any kind of bombardment with fast ions results in the destruction of the film structure. Therefore, the use of a mechanical shield yields the best quality of zincoxide. Another part of the thesis deals with the implantation of reactive gas ions below the target surface during reactive sputtering. Experimental results and a comparison with model predictions confirms that this effect can have a significant influence on the process dynamics since the effective fraction of the target covered with the compound is enhanced."]},{"key":"dc:source","label":"Dc Source","values":["Aachen : Publikationsserver der RWTH Aachen University 150 S. : graph. Darst. (2006). = Aachen, Techn. Hochsch., Diss., 2006"]},{"key":"dc:title","label":"Title","values":["Strukturbildung und Prozessstabilisierung beim reaktiven Sputtern"]}]}],"canonical_facts":{"dc:contributor":["Wuttig, Matthias"],"dc:coverage":["DE"],"dc:creator":["Severin, Daniel"],"dc:date":["2006"],"dc:description":["Reactive sputtering is an important deposition technique for oxides or nitrides employed e.g. in optical coatings. The process is characterized by high deposition rates and compact films as a result of the kinetic energy input from the glow discharge. Nevertheless, this deposition technique suffers from several drawbacks such as a highly unstable transition regime between the metallic and compound mode which is frequently accompanied by a hysteresis. In this work calculations and a comparison with experiments show that the addition of nitrogen during reactive sputtering of oxides can lead to a tremendous stabilisation of the process and a higher deposition rate. At the same time, only small amounts of nitrogen are incorporated into the film. Furthermore, the arc formation is supressed. The nitrogen can be added either as a second reactive gas or by the use of a ceramic nitride target. The key parameter for a sucessfull deposition process with nitrogen is the reactivity of the metal and the time scale which determines the process dynamics both at the target surface and at the chamber wall. This can be tuned by variing the size of these areas. Furthermore, due to the addition of nitrogen into the discharge process, a significant fraction of the target surface usually covered with an oxide is displaced by the corresponding nitride. This leads to a reduced bombardment of the growing film with fast negatively charged oxygen ions and has a tremendous effect on the structure formation of the growing film. For instance, the control of the oxygen ions during reactive sputtering of zirconia enables to deposit amorphous, cubic or monoclinic films. In contrast, during reactive sputtering of zincoxide, any kind of bombardment with fast ions results in the destruction of the film structure. Therefore, the use of a mechanical shield yields the best quality of zincoxide. Another part of the thesis deals with the implantation of reactive gas ions below the target surface during reactive sputtering. Experimental results and a comparison with model predictions confirms that this effect can have a significant influence on the process dynamics since the effective fraction of the target covered with the compound is enhanced."],"dc:identifier":["https://publications.rwth-aachen.de/record/52443","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114667%22"],"dc:language":["ger"],"dc:publisher":["Publikationsserver der RWTH Aachen University"],"dc:relation":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-16729"],"dc:rights":["info:eu-repo/semantics/openAccess"],"dc:source":["Aachen : Publikationsserver der RWTH Aachen University 150 S. : graph. Darst. (2006). = Aachen, Techn. 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