{"id":{"repo_id":"aachen","oai_identifier":"oai:publications.rwth-aachen.de:52307"},"canonical_url":"https://search.dev.ndltd.org/etd/aachen/oai:publications.rwth-aachen.de:52307","repository":{"repo_id":"aachen","name":"RWTH Aachen University","base_url":"https://publications.rwth-aachen.de/oai2d"},"display":{"title":"Auslegung und Charakterisierung eines Extrem-Ultraviolett-Transmissionsmikroskops","abstract":"In order to improve the resolving power of future lithographic techniques and analytical methods for the manufacturing of nanoscopic measured semiconductors, the utilization of extreme ultraviolet (EUV) radiation is currently taken into consideration world-wide. Because of the short wavelengths and the high element specific absorption of EUV-radiation microscopic analyses of physical structures in the order of less than 10 nm and thicknesses of several 100 nm are possible. Thus, also in material sciences and in system biology the gap between the limits of light microscopy and the atomic resolving electron microscopy can be further narrowed. To demonstrate the application potential of EUV-microscopy, in this thesis a first synchrotron-independent transmission microscope was built up for the wavelength 13.5 nm. The concept of the microscope includes a pulsed xenon gas discharge plasma source, a grazing incidence condenser, a Schwarzschild objective and a digital detector. The built up system allows exposure times from 100 ns up. With the EUV-microscope high-contrast and sharp images with lateral resolutions of about 600 nm were achieved, which is limited by the applied commercial CCD-detector. Even samples with thicknesses of 30 nm result in significant absorption contrasts and supply evidence for the microscope’s sensitivity with regard to the chemical consistency of the analyzed samples. Examples of potential applications of EUV-microscopy were given for analyses of ultra-thin films, multilayer systems, masks and nano composites as well as biological tissue, cells und viruses.","abstract_html":"In order to improve the resolving power of future lithographic techniques and analytical methods for the manufacturing of nanoscopic measured semiconductors, the utilization of extreme ultraviolet (EUV) radiation is currently taken into consideration world-wide. Because of the short wavelengths and the high element specific absorption of EUV-radiation microscopic analyses of physical structures in the order of less than 10 nm and thicknesses of several 100 nm are possible. Thus, also in material sciences and in system biology the gap between the limits of light microscopy and the atomic resolving electron microscopy can be further narrowed. To demonstrate the application potential of EUV-microscopy, in this thesis a first synchrotron-independent transmission microscope was built up for the wavelength 13.5 nm. The concept of the microscope includes a pulsed xenon gas discharge plasma source, a grazing incidence condenser, a Schwarzschild objective and a digital detector. The built up system allows exposure times from 100 ns up. With the EUV-microscope high-contrast and sharp images with lateral resolutions of about 600 nm were achieved, which is limited by the applied commercial CCD-detector. Even samples with thicknesses of 30 nm result in significant absorption contrasts and supply evidence for the microscope’s sensitivity with regard to the chemical consistency of the analyzed samples. Examples of potential applications of EUV-microscopy were given for analyses of ultra-thin films, multilayer systems, masks and nano composites as well as biological tissue, cells und viruses.","abstract_has_math":false,"creators":["Walter, Konstantin"],"institution":"Publikationsserver der RWTH Aachen University","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Poprawe, Reinhart"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-30T19:40:50Z","subjects":["info:eu-repo/classification/ddc/600","Technik","Extremes Ultraviolett","Mikroskop","EUV-Strahlung","EUV-Mikroskop","Gasentladungsquelle","Glanzwinkelkondensor","Schwarzschildobjektiv","EUV-radiation","EUV-microscope","gas discharge source","grazing incidence condenser","Schwarzschild objective"],"languages":["ger"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114542%22"],"render_values":[{"text":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114542%22","href":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114542%22","code":true}]}]},"links":{"outbound_url":"https://publications.rwth-aachen.de/record/52307","outbound_label":"Repository record","outbound_source":"dc:identifier"},"source_record":{"url":"https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A52307","prefix":"oai_dc"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Poprawe, Reinhart"]},{"key":"dc:creator","label":"Author","values":["Walter, Konstantin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:coverage","label":"Dc Coverage","values":["DE"]},{"key":"dc:date","label":"Dc Date","values":["2006"]},{"key":"dc:publisher","label":"Institution","values":["Publikationsserver der RWTH Aachen University"]},{"key":"dc:relation","label":"Dc Relation","values":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-15313"]},{"key":"dc:type","label":"Dc Type","values":["info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["info:eu-repo/classification/ddc/600","Technik","Extremes Ultraviolett","Mikroskop","EUV-Strahlung","EUV-Mikroskop","Gasentladungsquelle","Glanzwinkelkondensor","Schwarzschildobjektiv","EUV-radiation","EUV-microscope","gas discharge source","grazing incidence condenser","Schwarzschild objective"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["ger"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/record/52307","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-114542%22"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In order to improve the resolving power of future lithographic techniques and analytical methods for the manufacturing of nanoscopic measured semiconductors, the utilization of extreme ultraviolet (EUV) radiation is currently taken into consideration world-wide. Because of the short wavelengths and the high element specific absorption of EUV-radiation microscopic analyses of physical structures in the order of less than 10 nm and thicknesses of several 100 nm are possible. Thus, also in material sciences and in system biology the gap between the limits of light microscopy and the atomic resolving electron microscopy can be further narrowed. To demonstrate the application potential of EUV-microscopy, in this thesis a first synchrotron-independent transmission microscope was built up for the wavelength 13.5 nm. The concept of the microscope includes a pulsed xenon gas discharge plasma source, a grazing incidence condenser, a Schwarzschild objective and a digital detector. The built up system allows exposure times from 100 ns up. With the EUV-microscope high-contrast and sharp images with lateral resolutions of about 600 nm were achieved, which is limited by the applied commercial CCD-detector. Even samples with thicknesses of 30 nm result in significant absorption contrasts and supply evidence for the microscope’s sensitivity with regard to the chemical consistency of the analyzed samples. Examples of potential applications of EUV-microscopy were given for analyses of ultra-thin films, multilayer systems, masks and nano composites as well as biological tissue, cells und viruses."]},{"key":"dc:source","label":"Dc Source","values":["Aachen : Publikationsserver der RWTH Aachen University 137 S. : Ill., graph. Darst. (2006). = Aachen, Techn. 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