{"id":{"repo_id":"aachen","oai_identifier":"oai:publications.rwth-aachen.de:50600"},"canonical_url":"https://search.dev.ndltd.org/etd/aachen/oai:publications.rwth-aachen.de:50600","repository":{"repo_id":"aachen","name":"RWTH Aachen University","base_url":"https://publications.rwth-aachen.de/oai2d"},"display":{"title":"Structural and optical properties of copper- and nickel-oxynitride films","abstract":"In this work, the structural, optical and electrical properties of copper- and nickel-oxynitride films have been investigated. The films have been deposited onto glass and silicon substrates by means of reactive dc sputtering from a metallic target in an argon/oxygen and nitrogen gas mixture. Oxynitride films have been prepared under different deposition conditions, in particular upon varying the nitrogen to oxygen gas flow, i.e. the relative gas flow ratio. It was possible to deposit films with physical properties varying between those of the corresponding oxides and nitrides of copper and nickel. It has been shown for the copper-oxynitride system, based on composition and X-ray analysis as well as simulations of the X-ray data that the incorporation of oxygen into the lattice of Cu3N and substitution of nitrogen by oxygen in the crystal structure of Cu3N is not in agreement with the experimental data. Therefore, it is believed that the copper-oxynitride films consists of two phase, namely the copperoxide and coppernitride, whereas whether the copperoxide or the coppernitride phase is amorphous. Furthermore, in the relative gas flow ratio of 2 and 10, films with optical band gap values ranging between 1 and 2.4 eV have been obtained. The deposition of nickel-oxynitride films at higher oxygen flows has yielded similar results such as the copper-oxynitride system. The nickel-oxynitride films deposited at high oxygen concentrations have band gap values covering a range of 2.2 to 3.6 eV. A peculiarity is here the occurrence of nickel-oxynitride films with band gap values of around 2.3 eV, revealing metallic behaviour regarding the electrical properties. A special feature here is the occurrence of phase separation for the nickel-oxynitride films sputtered in the nitride-mode. The addition of small amounts of oxygen led to the coexistence of two nickel-nitride phases, a hexagonal and a body centred tetragonal, which is not observed by the deposition of nickel-nitride films in an argon/nitrogen discharge.","abstract_html":"In this work, the structural, optical and electrical properties of copper- and nickel-oxynitride films have been investigated. The films have been deposited onto glass and silicon substrates by means of reactive dc sputtering from a metallic target in an argon/oxygen and nitrogen gas mixture. Oxynitride films have been prepared under different deposition conditions, in particular upon varying the nitrogen to oxygen gas flow, i.e. the relative gas flow ratio. It was possible to deposit films with physical properties varying between those of the corresponding oxides and nitrides of copper and nickel. It has been shown for the copper-oxynitride system, based on composition and X-ray analysis as well as simulations of the X-ray data that the incorporation of oxygen into the lattice of Cu3N and substitution of nitrogen by oxygen in the crystal structure of Cu3N is not in agreement with the experimental data. Therefore, it is believed that the copper-oxynitride films consists of two phase, namely the copperoxide and coppernitride, whereas whether the copperoxide or the coppernitride phase is amorphous. Furthermore, in the relative gas flow ratio of 2 and 10, films with optical band gap values ranging between 1 and 2.4 eV have been obtained. The deposition of nickel-oxynitride films at higher oxygen flows has yielded similar results such as the copper-oxynitride system. The nickel-oxynitride films deposited at high oxygen concentrations have band gap values covering a range of 2.2 to 3.6 eV. A peculiarity is here the occurrence of nickel-oxynitride films with band gap values of around 2.3 eV, revealing metallic behaviour regarding the electrical properties. A special feature here is the occurrence of phase separation for the nickel-oxynitride films sputtered in the nitride-mode. The addition of small amounts of oxygen led to the coexistence of two nickel-nitride phases, a hexagonal and a body centred tetragonal, which is not observed by the deposition of nickel-nitride films in an argon/nitrogen discharge.","abstract_has_math":false,"creators":["Uslu, Fahri"],"institution":"Publikationsserver der RWTH Aachen University","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Wuttig, Matthias"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2008,"date_issued":"2008","date_published":"2008","updated_at":"2026-07-30T19:40:25Z","subjects":["info:eu-repo/classification/ddc/530","Reaktives Sputtern","Röntgendiffraktometrie","Durchstrahlungselektronenmikroskopie","Dünne Schicht","Physik","reactive sputtering","thin film","x-ray diffraction","transmission-electronmicroscopy"],"languages":["eng"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-113138%22"],"render_values":[{"text":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-113138%22","href":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-113138%22","code":true}]}]},"links":{"outbound_url":"https://publications.rwth-aachen.de/record/50600","outbound_label":"Repository record","outbound_source":"dc:identifier"},"source_record":{"url":"https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A50600","prefix":"oai_dc"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Wuttig, Matthias"]},{"key":"dc:creator","label":"Author","values":["Uslu, Fahri"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:coverage","label":"Dc Coverage","values":["DE"]},{"key":"dc:date","label":"Dc Date","values":["2008"]},{"key":"dc:publisher","label":"Institution","values":["Publikationsserver der RWTH Aachen University"]},{"key":"dc:relation","label":"Dc Relation","values":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-26996"]},{"key":"dc:type","label":"Dc Type","values":["info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["info:eu-repo/classification/ddc/530","Reaktives Sputtern","Röntgendiffraktometrie","Durchstrahlungselektronenmikroskopie","Dünne Schicht","Physik","reactive sputtering","thin film","x-ray diffraction","transmission-electronmicroscopy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/record/50600","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-113138%22"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this work, the structural, optical and electrical properties of copper- and nickel-oxynitride films have been investigated. The films have been deposited onto glass and silicon substrates by means of reactive dc sputtering from a metallic target in an argon/oxygen and nitrogen gas mixture. Oxynitride films have been prepared under different deposition conditions, in particular upon varying the nitrogen to oxygen gas flow, i.e. the relative gas flow ratio. It was possible to deposit films with physical properties varying between those of the corresponding oxides and nitrides of copper and nickel. It has been shown for the copper-oxynitride system, based on composition and X-ray analysis as well as simulations of the X-ray data that the incorporation of oxygen into the lattice of Cu3N and substitution of nitrogen by oxygen in the crystal structure of Cu3N is not in agreement with the experimental data. Therefore, it is believed that the copper-oxynitride films consists of two phase, namely the copperoxide and coppernitride, whereas whether the copperoxide or the coppernitride phase is amorphous. Furthermore, in the relative gas flow ratio of 2 and 10, films with optical band gap values ranging between 1 and 2.4 eV have been obtained. The deposition of nickel-oxynitride films at higher oxygen flows has yielded similar results such as the copper-oxynitride system. The nickel-oxynitride films deposited at high oxygen concentrations have band gap values covering a range of 2.2 to 3.6 eV. A peculiarity is here the occurrence of nickel-oxynitride films with band gap values of around 2.3 eV, revealing metallic behaviour regarding the electrical properties. A special feature here is the occurrence of phase separation for the nickel-oxynitride films sputtered in the nitride-mode. The addition of small amounts of oxygen led to the coexistence of two nickel-nitride phases, a hexagonal and a body centred tetragonal, which is not observed by the deposition of nickel-nitride films in an argon/nitrogen discharge."]},{"key":"dc:source","label":"Dc Source","values":["Aachen : Publikationsserver der RWTH Aachen University 186 S. : Ill., graph. Darst. (2008). = Aachen, Techn. Hochsch., Diss., 2008"]},{"key":"dc:title","label":"Title","values":["Structural and optical properties of copper- and nickel-oxynitride films"]}]}],"canonical_facts":{"dc:contributor":["Wuttig, Matthias"],"dc:coverage":["DE"],"dc:creator":["Uslu, Fahri"],"dc:date":["2008"],"dc:description":["In this work, the structural, optical and electrical properties of copper- and nickel-oxynitride films have been investigated. The films have been deposited onto glass and silicon substrates by means of reactive dc sputtering from a metallic target in an argon/oxygen and nitrogen gas mixture. Oxynitride films have been prepared under different deposition conditions, in particular upon varying the nitrogen to oxygen gas flow, i.e. the relative gas flow ratio. It was possible to deposit films with physical properties varying between those of the corresponding oxides and nitrides of copper and nickel. It has been shown for the copper-oxynitride system, based on composition and X-ray analysis as well as simulations of the X-ray data that the incorporation of oxygen into the lattice of Cu3N and substitution of nitrogen by oxygen in the crystal structure of Cu3N is not in agreement with the experimental data. Therefore, it is believed that the copper-oxynitride films consists of two phase, namely the copperoxide and coppernitride, whereas whether the copperoxide or the coppernitride phase is amorphous. Furthermore, in the relative gas flow ratio of 2 and 10, films with optical band gap values ranging between 1 and 2.4 eV have been obtained. The deposition of nickel-oxynitride films at higher oxygen flows has yielded similar results such as the copper-oxynitride system. The nickel-oxynitride films deposited at high oxygen concentrations have band gap values covering a range of 2.2 to 3.6 eV. A peculiarity is here the occurrence of nickel-oxynitride films with band gap values of around 2.3 eV, revealing metallic behaviour regarding the electrical properties. A special feature here is the occurrence of phase separation for the nickel-oxynitride films sputtered in the nitride-mode. The addition of small amounts of oxygen led to the coexistence of two nickel-nitride phases, a hexagonal and a body centred tetragonal, which is not observed by the deposition of nickel-nitride films in an argon/nitrogen discharge."],"dc:identifier":["https://publications.rwth-aachen.de/record/50600","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-113138%22"],"dc:language":["eng"],"dc:publisher":["Publikationsserver der RWTH Aachen University"],"dc:relation":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-26996"],"dc:rights":["info:eu-repo/semantics/openAccess"],"dc:source":["Aachen : Publikationsserver der RWTH Aachen University 186 S. : Ill., graph. Darst. (2008). = Aachen, Techn. Hochsch., Diss., 2008"],"dc:subject":["info:eu-repo/classification/ddc/530","Reaktives Sputtern","Röntgendiffraktometrie","Durchstrahlungselektronenmikroskopie","Dünne Schicht","Physik","reactive sputtering","thin film","x-ray diffraction","transmission-electronmicroscopy"],"dc:title":["Structural and optical properties of copper- and nickel-oxynitride films"],"dc:type":["info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]},"updated_at":"2026-07-30T19:40:25Z"}