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Showing 1 to 20 of 26 for “"zincblende"”.
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Structural Characterisation of Heteroepitaxial Zincblende Gallium Nitride
… ‘green gap’ problem. III-nitrides based on the zincblende crystal structure have the potential to bridge the ‘green gap’ due to the theoretically achievable absence of internal polarisation fields that plague the commonly used c-plane wurtzite crystal structure. In this thesis, metastable …
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The Effect of Pressure on Zincblende and Related Structures
Made available in DSpace on 2014-12-05T17:15:34Z (GMT). No. of bitstreams: 1 6101607.pdf: 4145641 bytes, checksum: d6ba98df199b2c12dd38e4b5ac7dbe27 (MD5) Previous issue date: 1961
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Size-binary Zincblende: A Colloidal Approach to Omnidirectional Photonic Bandgaps
… affect the photonic dispersion relations. Zincblende structures are targets for binary colloidal assembly since they are closely related to well-known photonic crystal structures such as diamond cubic and inverse opal. In this investigation, we model zincblende with a crystal basis …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… wurtzite (wz)-GaN based LEDs and novel zincblende (zb)-GaN based LEDs. The investigated wz-GaN based multiple quantum well structures have been found in other studies to have higher internal quantum efficiency (IQE) when the quantum wells (QWs) were grown at relatively high temperatures …
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Negative Thermal Expansion in Zincblende Structure: an EXAFS study of CdTe
… a deeper insight on the local origin of NTE in zincblende crystals, EXAFS measurements have been performed on CdTe, which has NTE properties intermediate between Ge and CuCl. In this work an accurate evaluation of the bond thermal expansion, parallel and perpendicular MSRDs and distribution …
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Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors
… of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a …
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Some Linear and Nonlinear Optical Properties of Zincblende-Type Crystals in the Far-Infrared Region
Made available in DSpace on 2014-12-08T22:24:38Z (GMT). No. of bitstreams: 1 7000890.pdf: 2689935 bytes, checksum: f328804b1873a4284ac2256a453dc9f5 (MD5) Previous issue date: 1969
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Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator
The objective of this research has been the study of device properties for emerging wide-bandgap cubic-phase semiconductors. Though the wide-bandgap semiconductors have great potential as high-power microwave devices, many gaps remain in the knowledge about their properties. The simulations in this …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for …
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An investigation into the phase stability of manganese oxide using quantum Monte Carlo and insights into materials prediction in the barium-ruthenium-sulfur phase space
… ordering and properties of the rock salt and zincblende structures of manganese oxide using fixed node dif- fusion Monte Carlo (DMC). Manganese oxide is a correlated, antiferromagnetic material that has proven to be challenging to model from first principles across a variety of approaches. …
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Structural, electronic and optical properties of cadmium sulfide nanoparticles
… stoichiometries, underlying crystal structures (zincblende, wurtzite, rocksalt), particle shapes (spherical, cuboctahedral, tetrahedral), and saturations (unsaturated, partly saturated, completely saturated). For saturated particles, the calculated onset excitations are strong excitonic. The …
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Crystal Growth, Atomic Ordering, Phase Transitions in Pseudobinary Constituents of the Metastable Quaternary (gallium-Antimony)(1-X)(germanium(2)(1-Y)tin(2y))(x) (Semiconductor, Sputtering, Ion Bombardment, X-Ray Diffraction, Electron Microscopy)
… an order-disorder structural transition from zincblende to diamond occurs in metastable (GaSb)(,1-x)(Ge(,2))(,x) and (GaSb)(,(1-x))(Ge(,2(1-y))Sn(,2y))(,x) alloys at a critical composition x(,c) even though the short-range order remains perfect throughout, i.e., there is no evidence of Ga-Ga …
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Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films
… phase diagrams was developed. Activities of zincblende-structure and diamond-structure (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ solid solutions were derived. Good agreements between experimental and theoretical results for GaAs-Ge, BaSb-Ge, and GaAs-Sn systems were obtained. A model was …
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A study of the elastic and electronic properties of III-nitride semiconductors
… c- and m-plane InGaN based QWs. For the case of zincblende InGaN, shortcomings in the currently used semi-empirical methods of strain and atomic relaxation are pointed out and quantified. The development of an improved framework for the analysis of the structural and elastic properties of …
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Topics in the theory of semiconductors: I. Novel semiconductors II. Uniaxial stress dependence of deep impurities
… alloys are predicted. These materials undergo a zincblende-to-diamond, order-disorder, structural phase transition as a function of composition x. The alloys exhibit V-shaped bowing in the energy band gap as a function of composition and a general lowering of the band gap: both effects are due to …
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CRYSTAL STRUCTURE ENGINEERING FOR IMPROVED PERFORMANCE OF EMERGING NANOSCALE DEVICES
… on the electronic and optical properties of zincblende InAs/GaAs quantum dots grown on (100), (110), and (111) orientated substrates. (2) Augment/extend the open source NEMO 3-D bandstructure simulator by incorporating a recently proposed first principles based model to gauge the importance …
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Multiscale modeling strategies for chemical vapor deposition
… selective epitaxy. The model takes into account zincblende structure of AlGaAs, and reproduces the c(4x4) reconstruction on (100) surfaces.
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A tight-binding analysis of the electronic properties of III-nitride semiconductors
… linear chain of atoms. We compare the zincblende and ideal wurtzite structures in terms of effective charges, spontaneous polarisation and piezoelectric coefficients, within a first nearest neighbour tight-binding model. We further compare these to real wurtzite structures and conclude …
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Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb
… from the inversion asymmetry of the tetrahedral zincblende structure. The transitions which show the effect are the double cyclotron resonance and the double cyclotron resonance combined with spin-flip. The reversal effect involves the interference between two matrix elements which contribute to …
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