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Showing 1 to 2 of 2 for “"wrap-gate"”.

  1. Computer Modeling of Silicon Quantum Dot Floating -Gate Flash Memory Devices

    … to the local-density approximation. We investigate the quantum-dot electronic structure, device capacitance-voltage characteristics and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters. In the simulation of a single rectangular …

    uiuc Repository record for Computer Modeling of Silicon Quantum Dot Floating -Gate Flash Memory Devices (opens in a new tab)

  2. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

    … were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel.

    uiuc Repository record for Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels (opens in a new tab)