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Showing 1 to 20 of 31 for “"wide-bandgap semiconductors"”.
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Graphene Heterostructures with Wide Bandgap Semiconductors
… microelettronica è legata all'assenza di un bandgap, che si ripercuote in uno scarso rapporto Ion/Ioff se utilizzato come canale di dispositivi di tipo MOSFET. Allo scopo di superare queste limitazioni, nuove concezioni di dispositivo basate su eterostrutture di Gr su semiconduttori sono …
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Electrical characterisation of defects in wide bandgap semiconductors.
… the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, …
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Investigation of wide bandgap semiconductors for room temperature spintronic, and photovoltaic applications
<p>"Suitability of wide bandgap semiconductors for room temperature (RT) spintronic, and photovoltaic applications is investigated.</p> <p>Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is …
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Engineering Rare-Earth Based Color Centers in Wide Bandgap Semiconductors for Quantum and Nanoscale Applications
… effects have been particularly promising in semiconductors and insulators, where isolated point-defects can behave as optically addressable ‘artificial atoms’ with narrow-band and tunable single-photon emission, and remarkable sensitivities to local fluctuations in temperature, magnetic or …
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Surface transfer doping of diamond for power electronics
The quest for a suitable wide-bandgap semiconductor for high-power and high-frequency applications is well motivated; wide-bandgap semiconductors generally exhibit a high breakdown field and can therefore support a high voltage over short distances. Diamond (Bandgap of 5.5 eV) in particular is an …
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Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are …
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Design and fabrication of field-effect III-V Schottky junction solar cells
… have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band …
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… In particular, power switches based on wide bandgap semiconductors such as gallium nitride (GaN) have emerged as promising alternatives to traditional silicon devices for low-voltage (10-100 V) applications. This work investigates the design, fabrication, and scaling of p-GaN-gate …
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Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications
… the requirements of future systems. Compound semiconductors have had a significant impact on this field, finding commercial success in millimeter-wave integrated circuit (MMIC) and optoelectronic applications due to material advantages over established silicon technology. This work presents …
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Infrared Spectroscopic Measurement of Titanium Dioxide Nanoparticle Shallow Trap State Energies
… bottom of the semiconductor conduction band. For wide bandgap semiconductors like titanium dioxide, shallow electron traps are the principle route for thermal excitation of electrons into the conduction band. The studies described here employ a novel infrared spectroscopic approach to determine …
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Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation
… or inverter is the transistor. Advances in wide-bandgap semiconductors such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are leading to improved transistor technologies. These materials allow for smaller transistors with reduced on state resistances and input capacitances, this reduces …
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Growth and Characterization of (InGa)2O3 Alloys
… new materials are being developed for use as wide bandgap semiconductors. Wide bandgap oxides are receiving attention as their properties are conducive to improved power and high breakdown devices. The indium gallium oxide alloy makes it one of the candidates that can be used in …
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Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance
… to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum …
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Design and Optimization of Multichip GaN Module Enabling Improved Switching Performance
<p>Wide bandgap semiconductors (SiC & GaN) due to their enhanced performance and superior material properties compared to traditional silicon power devices have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) …
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Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator
… been the study of device properties for emerging wide-bandgap cubic-phase semiconductors. Though the wide-bandgap semiconductors have great potential as high-power microwave devices, many gaps remain in the knowledge about their properties. The simulations in this work are designed to give insight …
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MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES
… critical electric field (>10 MV/cm), and large bandgap (5.47 eV), Diamond has overwhelming advantages over Silicon and wide bandgap semiconductors (WBG) for ultra-high voltage and high temperature applications (>3 kV and >450 K, respectively). However, despite its tremendous potential, …
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Atom probe tomography study of wide bandgap semiconductor materials
… on developing atom probe tomography (APT) for semiconductors. APT is quickly gaining interest in the field of material characterization because of its unique ability to provide 3D nanoscale studies. APT has been widely used in metals and conductive materials but design changes in the tool in …
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Analyzing Electronic Correlation Effects in Molecules and Semiconductor Point Defects from First Principles Beyond Density Functional Theory
… based molecules and point defects in wide-bandgap semiconductors have been of particular interest lately due to their potential quantum information science applications. To accurately calculate the electronic properties of these systems from first principles, it is important to …
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AN EXPLORATION OF DEFECT-BASED SINGLE PHOTON SOURCES: ZINC OXIDE AND HEXAGONAL BORON NITRIDE
Isolated point defects in wide bandgap semiconductors are single photon sources with applications in quantum optics, precision sensing, and quantum information processing technologies. Although the nitrogen-vacancy center in diamond has historically garnered the most attention, efforts to discover …
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