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Showing 1 to 20 of 29 for “"wide-bandgap semiconductor"”.
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Atom probe tomography study of wide bandgap semiconductor materials
… on developing atom probe tomography (APT) for semiconductors. APT is quickly gaining interest in the field of material characterization because of its unique ability to provide 3D nanoscale studies. APT has been widely used in metals and conductive materials but design changes in the tool in …
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 …
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The impact of conventional and wide bandgap semiconductor PWM inverter EDM bearing currents on motor bearings.
… end, motor drives of the future will contain wide bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN). The introduction of these WBG devices into motor drives comes with exacerbated application issues due to faster dv/dt device turn on/off times and …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although compromises …
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High Temperature CMOS Silicon Carbide Asynchronous Circuit Design
… as well as traditional Boolean circuitry with a wide-bandgap semiconductor material, Silicon Carbide (SiC). A total of nineteen circuits have been designed and fabricated. Chip testing results show correct operation for all circuits returned from fabrication, with most performing at or above the …
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High Temperature Silicon Carbide Mixed-signal Circuits for Integrated Control and Data Acquisition
<p>Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for …
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Ultra-high Mobility 2DEG Heterostructure Fabricate by Oxide Molecular Beam Epitaxy for Device Application
… which is the demand for application of wide bandgap semiconductor devices in modern power electronics industries. Both LaAlO3 and SrTiO3 are stable insulators with high dielectric constants and bandgaps over 3eV, making them suitable for power electronics and transparent optical devices. …
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Modelling of Multichannel GaN Transistors
… (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The specific properties of GaN material make the …
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Surface transfer doping of diamond for power electronics
The quest for a suitable wide-bandgap semiconductor for high-power and high-frequency applications is well motivated; wide-bandgap semiconductors generally exhibit a high breakdown field and can therefore support a high voltage over short distances. Diamond (Bandgap of 5.5 eV) in particular is an …
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Design and Implementation of a Multiphase Buck Converter for Front End 48V-12V Intermediate Bus Converters
… converters (IBCs) use silicon power metal oxide semiconductor field effect transistors (MOSFETs), which recently have reached the limit in terms of turn on resistance (RDSON) and switching frequency. In order to make the IBCs smaller, the switching frequency needs to be pushed higher, which will …
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Evaluation and Design of a SiC-Based Bidirectional Isolated DC/DC Converter
… systems. Due to the recent advancement in wide-bandgap semiconductor devices, it has become feasible to achieve the galvanic isolation using bidirectional isolated DC/DC converters instead of line-frequency transformers. A survey of the latest generation SiC MOSFET is performed. The devices …
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Synthesis and characterization of TiO2 nanotube Schottky diodes
Metal-semiconductor interfaces on one-dimensional (1D) nanostructures represent crucial building blocks for next-generation nanoelectronics. Over the past two decades, chemically synthesized titanium dioxide nanotubes (TiO2-NTs) have gained a considerable amount of interest due to their high …
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Optical and electronic properties of defective semiconductors from first principles calculations
Defects in semiconductors can play a vital role and even dominate the performance of optoelectronic devices. Thus, understanding the relationship between structural defects and optoelectronic properties is central to the design of new high-performance materials. In this dissertation, we apply …
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Excited State Dynamics of Dyes Bound to Nanocrystals
… consist of dye molecules bound to the surface of wide-bandgap semiconductor metal oxide NPs. The dye molecules absorb light, and the excited dye molecules then transfer an electron to the conduction band (CB) of the NP. These dye-NP systems are used for applications such as solar cells and …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
In the recent past, ultra-wide bandgap β-Ga2O3 has drawn a significant amount of attention as an emerging wide bandgap semiconductor because of its promising material properties, for example, large bandgap (~ 4.9 eV), high electric breakdown field (~ 8 MVcm-1), hard radiation tolerance, physical …
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Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
… Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum …
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Electronic band engineering: Titanium dioxide particulate layers for photocatalysis
Titanium dioxide (TiO2) is a wide bandgap semiconductor with many application advantages for photocatalysis. However, in the porous films that typify applications, photogenerated charge carriers typically drive reactions inefficiently due to fast recombination. To mitigate this problem, this work …
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
Wide bandgap semiconductor by virtue of its high critical electric field, low intrinsic carrier concentration, high thermal conductivity is considered a promising material for enabling high density power conversion systems with a smaller form factor. Gallium Nitride (GaN) in particular, with its …
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Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)
Current AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice …
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