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Showing 1 to 20 of 38 for “"wide-bandgap (WBG)"”.
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A Compact Three-Phase Multi-stage EMI Filter with Compensated Parasitic-Component Effects
With the advent of wide bandgap (WBG) semiconductor devices, the electromagnetic interference (EMI) emissions are more pronounced due to high slew rates in the form of high dv/dt and high di/dt at higher switching frequencies compared to the traditional silicon technology. To comply with the …
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Dynamic Characterization of Wide Bandgap Devices for Power Electronic System Integration
Wide Bandgap (WBG) devices offer significant performance advantages for next-generation power electronic systems. However, the dynamic stresses induced by application-specific conditions present limited physical and behavioral understanding, posing critical concerns for reliability and performance …
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A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices
… high power density need to combine lasted wide bandgap (WBG) device technology and high switching frequency to reduce passive filter size thus further shrink overall space. While still maintaining decent power conversion efficiency and low electromagnetic interference (EMI) with higher …
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Low Pressure and Short-Time Silver-Sintering for Power Modules
… of the main chip interconnect technologies in wide bandgap (WBG) semiconductor power modules due to its excellent thermal conductivity, high temperature stability and mechanical reliability. However, the traditional silver sintering process generally has the problems of long sintering time and …
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The impact of conventional and wide bandgap semiconductor PWM inverter EDM bearing currents on motor bearings.
… end, motor drives of the future will contain wide bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN). The introduction of these WBG devices into motor drives comes with exacerbated application issues due to faster dv/dt device turn on/off times and …
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Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)
… integrated power converter. The advancement of wide-bandgap (WBG) devices like silicon carbide (SiC) allows converters to have higher power and faster switching... To benefit from these devices, the packaging of the converter needs to be carefully considered. This thesis presents the design of a …
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Evaluation and Analysis on the Effect of Power Module Architecture on Common Mode Electromagnetic Interference
Wide bandgap (WBG) semiconductor devices are becoming increasing popular in power electronics applications. However, WBG semiconductor devices generate a substantial amount of conducted electromagnetic interference (EMI) compared to silicon (Si) devices due to their ability to operate at higher …
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Modeling of gallium nitride transistors for high power and high temperature applications
Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices result in large leakage currents with lower reverse blocking efficiency. Two major de ciencies result in crippling underperformance in GaN power devices. First, conventional GaN …
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Soft-Switching, Interleaved Inverter for High Density Applications
… while simultaneously shrinking them in size. New wide-bandgap (WBG) devices, combined with soft-switching, now allow inverters to shrink in size by pushing to higher switching frequencies while maintaining efficiency. Classic H-Bridge topologies have limited switching frequency due to hard …
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Thermal Performance of AlGaN/GaN Based Power Switching Devices for Transformerless Inverters
<p>Wide Bandgap (WBG) semiconductors like Silicon Carbide (SiC), Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) have superior material properties as compared to Silicon (Si) like higher electrical breakdown voltages and bandgap energies as well as lower leakage currents as compared to …
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High power wide bandgap cascode switching circuits
Emerging wide bandgap (WBG) power transistors are capable of improving the efficiency of mains voltage power electronic circuits. Several commercial WBG transistors are now available, but all exhibit undesirable gate drive characteristics. The cascode circuit has been suggested as a solution to …
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Equivalent Modeling of Medium-Voltage Gate Drive Circuitry
… has been a recent increase in the utilization of wide bandgap (WBG) devices in power electronic converter designs. Designs leveraging these devices are capable of achieving high efficiencies and increased power density as compared to more traditional Silicon (Si) based converters. The same …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… possibility for further improvements. Wide bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior physical properties and demonstrate great potential for replacing conventional Si semiconductors with WBG technology, pushing the boundaries …
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Electric Field Grading and Electrical Insulation Design for High Voltage, High Power Density Wide Bandgap Power Modules
… high power density concept described above, "wide bandgap (WBG) power modules" made from materials such as "SiC and GaN (and, soon, Ga2O3 and diamond)", which can endure "higher voltages" and "currents" rather than "Si-based modules", are considered to be the most promising solution to …
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Memory Module Design for High-Temperature Applications in SiC CMOS Technology
<p>The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to …
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High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept
Wide bandgap (WBG) semiconductor power devices are attracting increasing attention due to their superior performance across various applications. For accurate measurement of these devices, a current sensor with a minimum bandwidth of 70 MHz is required. This thesis thoroughly explores the design …
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Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module
… carrier concentration, dictated primarily by the bandgap of the material, which increases with temperature. Wide-bandgap (WBG) power semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN), have been adopted for use in these applications, but exhibit a degradation in performance …
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Customisable Magnetic Components Using Nanocrystalline Flake Ribbon
… today’s energy challenges. The advancement of wide bandgap (WBG) semiconductors enables power electronic devices to operate at elevated switching frequencies, withstand higher temperatures, achieve greater power density, and deliver improved system efficiency. In accordance with the developing …
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High-Frequency Oriented Design of Gallium-Nitride (GaN) Based High Power Density Converters
The wide-bandgap (WBG) devices, like gallium nitride (GaN) and silicon carbide (SiC) devices have proven to be a driving force of the development of the power conversion technology. Thanks to their distinct advantages over silicon (Si) devices including the faster switching speed and lower …
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