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Showing 1 to 7 of 7 for “"weak antilocalization."”.

  1. Thermoelectric and electrical transport properties of Bi2Te3 compacted nanoparticles bulk material

    … electrical transport properties and a distinct weak antilocalization. A downwards trend in the electrical resistivity at temperatures below 5 K was attributed to an increase in the coherence length by applying the Hikami-Larkin-Nagaoka model. THz time-domain spectroscopy revealed a dominance of …

    bielefeld Repository record for Thermoelectric and electrical transport properties of Bi2Te3 compacted nanoparticles bulk material (opens in a new tab)

  2. Spin-orbit or Aharonov-Casher edge states in semiconductor systems

    … Rashba spin-orbit coupling constant α using the weak antilocalization analysis as a function of the side-gate voltage. We take the effect of the finite width into account and find the corrected values. With the simulation of electric fields in the wide channel and narrow channel, we found that …

    vt Repository record for Spin-orbit or Aharonov-Casher edge states in semiconductor systems (opens in a new tab)

  3. Spin States in Bismuth and Its Surfaces: Hyperfine Interaction

    … quantum corrections to the conductivity due to weak antilocalization, which depend on the coherence of the spin state of the carriers. The carrier spin polarization is generated by a strong DC current in the Bi(111) surface states (here called the Edelstein effect), which then induces dynamic …

    vt Repository record for Spin States in Bismuth and Its Surfaces: Hyperfine Interaction (opens in a new tab)

  4. Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials

    … are systematically studied by analysis of the weak antilocalization transport signature, a quantum interference phenomenon sensitive to spin-orbit coupling. The "findings indicate that the phase coherence scales proportionally to the limiting dimension of the structure for sizes less than 500 …

    vt Repository record for Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials (opens in a new tab)

  5. Spin-Orbit Coupling in SrTiO3/Si Thin Films at High Carrier Concentration

    … carrier concentration (≤ 10¹⁴, cmˉ²) which shows Weak- localization effect. As the carrier concentration increases ( (1 − 2) × 10¹⁴, cmˉ²), we see WAL effect which occur due to spin -orbit coupling. The thesis describes the results on my thesis research. I investigate the effect of spin-orbit …

    texas-state Repository record for Spin-Orbit Coupling in SrTiO3/Si Thin Films at High Carrier Concentration (opens in a new tab)

  6. Investigating electron transport in chemical vapor deposition graphene nanostructures

    … heterostructure and a special transition from weak localization (WL) to weak antilocalization (WAL) is found around a certain carrier concentration due to surface roughness induced patches. This result provides insight into fabrication and operation of scalable graphene spintronic devices. …

    cambridge Repository record for Investigating electron transport in chemical vapor deposition graphene nanostructures (opens in a new tab)

  7. Terahertz Spectroscopy of Topological Insulators and other 2-Dimensional Materials

    … The electrical transport measurements reveal weak antilocalization behavior in the Bi2Se3 sample, consistent with the presence of a topological surface state. Chapter 4, discusses the phase transition in a rather less considered TI, Sb2Te3, using THz-TDS. We track through a series of …

    cambridge Repository record for Terahertz Spectroscopy of Topological Insulators and other 2-Dimensional Materials (opens in a new tab)