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Showing 1 to 4 of 4 for “"weak (anti-)localization"”.

  1. Bismuth nanowire and antidot array studies motivated by thermoelectricity

    … the fabrication of nanostructures of bismuth, antimony and bismuth-antimony alloys. The cylindrical template pores were used to synthesize nanowires by electrochemical methods. The porous surface of the template was used as a substrate for the e-beam deposition of antidot array thin films. …

    mit Repository record for Bismuth nanowire and antidot array studies motivated by thermoelectricity (opens in a new tab)

  2. Topological Transport in Sb Quantum Wells

    … along with quantum interference effects (e.g. weak localization). These effects are used to explain low and high field data. Zero field conductance measurements show reduced bulk conduction and residual surface conductivity at zero well thickness. Low field measurements exhibit a strong weak

    oklahoma-thes Repository record for Topological Transport in Sb Quantum Wells (opens in a new tab)

  3. Charge transport mechanism within 2D material films and its role on field effect transistor and capacitor technology

    … reports a average hopping distance (Ravg) and localization length (ξloc) of 0.21 nm and 0.4 nm for MoS2 films, while the graphene films showed a Ravg and ξloc of 14 nm and 13 nm. Both Ravg and ξloc for graphene and MoS2 films is smaller compared to the lateral size of the graphene and MoS2 …

    cambridge Repository record for Charge transport mechanism within 2D material films and its role on field effect transistor and capacitor technology (opens in a new tab)

  4. Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten

    … coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of gated InN, InAs and GaAs/AlGaAs nanowires were …

    aachen Repository record for Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten (opens in a new tab)