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Showing 1 to 2 of 2 for “"volume inversion"”.
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Monte Carlo study of current variability in UTB SOI DG MOSFETs
… 10 nm, with enhancement from band splitting and volume inversion competing with scattering from phonons, Coulomb interactions, interface roughness and body thickness fluctuation. Here, the effect of the last scattering mechanism on the drive current is examined as it is considered a significant …
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Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric …