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Showing 1 to 2 of 2 for “"volatile switching"”.
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been proposed to explain the switching behavior in CBRAM devices, i.e. metal ion migration and subsequent formation and rupture of conductive filament, …
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power consumption, high OFF-/ON-state resistance ratio, good endurance, and long retention. Besides the nonvolatile memory applications, …