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Showing 1 to 19 of 19 for “"void nucleation"”.
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Atomistic model of void nucleation and growth during electromigration
Void formation due to electromigration is among the most significant reliability problems in the semiconductor industry. To help gain a better understanding of the atomistic processes involved in void formation under electromigration conditions we have used the Embedded Atom Method (BAM) to …
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Micromechanics of the Hydrogen Effect on Plasticity and Interfacial Decohesion
… acting concurrently lead to a reduction of the void nucleation stress at the particle-matrix interface. However, while hydrogen-induced decohesion decreases the void nucleation strain, matrix-softening increases it. Some other issues such as the effect of interfacial diffusivity and strain rate …
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Reliability of copper interconnects in integrated circuits
… failure due to electromigration-induced void nucleation and growth near the cathode ends of interconnect segments. However, results from accelerated electromigration tests show that the simple failure analyses based on simple void nucleation and growth can not explain the wide range of …
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Modeling of and experiments characterizing electromigration-induced failures in interconnects
… a detailed knowledge of stress evolution and void growth processes enables a determination of the electromigration-induced failure times of these interconnects. This thesis provides this knowledge through the development of an electromigration simulation MIT/EmSim and through experiments. The …
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Coupled mechanochemical theories for reacting systems with application to nanovoid nucleation and Li-ion batteries
<p>Hollow nanoparticles (NPs) are produced by void nucleation and growth during chemical reactions. However, there is no proper understanding of nucleation and growth mechanisms, and their predictive modeling. Furthermore, models based on the Kirkendall effect predict the process time, which is …
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The electromigration drift velocity and the reliability of dual-damascene copper interconnect trees
… interface has been identified as the site for void nucleation and the most dominant diffusion path. Consequently, an asymmetry in lifetime exists between via-above and via-below interconnect lines. It has also been found that at short line lengths, true Blech immortality occurs only for very …
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Roles of Interfacial Reaction on Mechanical Properties of Solder Interfaces
… interface. Further aging induced numerous voids along the Cu3Sn/Cu interface. These interfacial voids were different from Kirkendall voids. Their formation was explained on basis of vacancy condensation at the interface as the Bi segregants reduced the number of effective Cu vacancy sink …
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Multi-layer three-dimensional silicon electronics enabled by wafer bonding
… degraded by the formation of interfacial voids. Void nucleation and growth are studied and counter-measures for void suppression are proposed and implemented. Silicon dioxide wafer bonding, on the other hand, is used as a temporary bond to attach a donor wafer to a handle wafer during …
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Fracture prediction in metal sheets
… part, is operated by the physical mechanisms of void nucleation, growth, and linkage. For ductile sheet, fracture is preceded by necking. Prediction of necking which limits sheet metal formability is well established and has been developed over the past several decades. However, an in-depth …
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Prediction of ductile crack formation in uncracked bodies
… fracture" in negative stress triaxialities, void nucleation, growth, and linkage in high stress triaxialities, a transition mode in intermediate stress triaxialities). A cut off value at the stress triaxiality of -1/3 is discovered. Effects of stress and strain ratios, specimen size and …
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New methodologies for interconnect reliability assessments of integrated circuits
… stress states. Failure of interconnects by void nucleation in single-layermetallization, as well as failure by void growth in the presence of refractory metal shunt layers are taken into account. The proposed methodology identifies a large fraction of interconnect trees in a typical design …
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A Multiscale Method for Simulating Fracture in Polycrystalline Metals
… a dependence of crack tip processes (i.e. void nucleation in brittle cleavage or dislocation emission in ductile blunting) on the direction of propagation due to slip plane orientation in adjacent grains. A new method of concurrently coupling molecular dynamics and finite element analysis …
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Positron annihilation spectroscopy to understand defect formation and evolution in neutron-irradiated Fe-Cr model alloys
… chromium content has a major effect on the void nucleation and growth seen in these Fe-Cr model alloys.
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Modeling Microvoid Localization with Explicit Finite Element Analysis
… is characterized by the micromechanisms of void nucleation, growth, and coalescence. Numerical modeling of these micromechanical phenomena has typically been performed with an implicit finite element analysis (FEA) solver, which accurately produces quasi-static results, but introduces …
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Quantitative Characterization of Nanovoids in Quenched Aluminum Using Small Angle X-ray Scattering Studies
… X-ray scattering (SAXS) study of quenched-in nanovoids in 99.988 and 99.995 at.% aluminum (Al) is presented. Nanovoids are agglomerations of point defects (vacancies) in the metallic host. SAXS is a non-destructive, dynamic probe which is ideally suited to characterize nanoscale electron density …
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Effect Of Annealing On Copper Thin Films:the Classical Size Effect And Agglomeration
… films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play important part in deciding the mode of void growth in Au and Pt thin films. …
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Analysis of Sans Transmission Data from Highly Absorbing Samples with Thickness Non-Uniformity and Pinhole Defects
Made available in DSpace on 2017-07-06T18:42:23Z (GMT). No. of bitstreams: 3 Barber_Nathan_R_MS.pdf: 32484155 bytes, checksum: c0e4681232f1c1f64f9d779adf81a73e (MD5) Barber_Nathan_R_MS_ABS.pdf: 611841 bytes, checksum: 2a58b6037413e2eb8a47b78e4ea8431b (MD5) license.txt: 4813 bytes, checksum: …
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Electromigration-Induced Interconnect Aging and its Repercussions on the Performance of Nanometer-Scale VLSI Circuits
… that may result in the formation of either voids (empty spaces inside the wire) or extrusions (metal accumulation into the dielectric), and for modern copper-based interconnects, experimental works have observed that failure happens typically through the formation and growth of voids. For …
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Microstructural evolution and mechanical behavior in nickel based alloys for very high temperature reactor
… possible to track the onset of accelerated creep void nucleation, growth and coalescence.