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Showing 1 to 11 of 11 for “"vertical GaN"”.
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Optically Controlled Vertical GaN finFET for Power Applications
… first demonstration of an optically controlled vertical GaN finFET. The first part of the thesis describes the physics and design of the device assisted by simulation, followed by the fabrication using a Design-Technology Co-Optimization (DTCO) approach. Finally, device measurements are …
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GaN-based vertical power devices
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data …
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Novel Structures for Scalable Vertical Gallium Nitride Power Devices
… and fabrication of several new gallium nitride (GaN) power devices will be developed to push beyond current device limitations. A key advancement surrounds the acknowledgment that vertical GaN power devices are fundamentally three-dimensional. Fabrication of these devices does not readily benefit …
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Development of vertical bulk gallium nitride power devices
Gallium nitride (GaN) is a promising material for power electronics due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as …
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Robustness of Gallium Nitride Power Devices
… work studies the robustness of Gallium Nitride (GaN) power device. The structures of many GaN power devices are fundamentally different from Si or Silicon Carbide (SiC) power devices, leading to numerous open questions on GaN power device robustness. Based on the device structure, this …
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Vertical gallium nitride power devices on bulk native substrates
Lateral power devices based on AlGaN/GaN hetero-structures have achieved excellent performance in the medium power range applications. However for higher voltage higher current switches, a vertical structure is preferred since its die area does not depend on the breakdown voltage. This thesis …
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Top-down Cross-Section Controlled III-Nitride Nanowire Lasers
… A top-down two-step etch process developed for vertical GaN nanowires offers the ability to precisely control the cross-section of the nanowire lasers. Consequently, the lasing properties can potentially be tailored by controlling the cross-section. In this dissertation, annular-shaped emission …
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Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
… for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are made with these wide-bandgap materials. The static and dynamic characterization of six different SiC MOSFETs from different manufacturers are presented. The static …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 MV/cm to 9 MV/cm. This allows a higher Baliga’s figure of merit (BFOM), i.e., unipolar Ga2O3 devices potentially possess a smaller …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier concentration. Another benefit is the high critical electric field (Ec), which is estimated to be from 6 MV/cm to 8 MV/cm in Ga2O3. This …
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Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module
This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. …