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Showing 1 to 9 of 9 for “"velocity saturation"”.

  1. semiconducting carbon nanotube transistors: electron and spin transport properties

    … Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity saturation model with a saturation velocity of 2 x 10^7 cm/s. A simple …

    maryland Repository record for semiconducting carbon nanotube transistors: electron and spin transport properties (opens in a new tab)

  2. Modeling of the output and transfer characteristics of graphene field-effect transistors

    … for the conductance, transconductance, and saturation voltage are derived. The results are in good agreement with the experimental data of Meric et al. [Nature Nanotechnology, vol. 3, p. 684, 2008] without assuming carrier density-dependent velocity saturation.

    uiuc Repository record for Modeling of the output and transfer characteristics of graphene field-effect transistors (opens in a new tab)

  3. Current limiters based on silicon pillar un-gated FET for field emission application

    … aspect ratio silicon pillars in order to achieve velocity saturation of carriers and obtain current source-like characteristics. Device and process simulations were initially conducted to solidify the derived analytical model and optimize design parameters. Devices were fabricated and …

    mit Repository record for Current limiters based on silicon pillar un-gated FET for field emission application (opens in a new tab)

  4. Feature scaling of large, ballasted, field emission arrays

    … (FET), which uses the channel pinch-o and velocity saturation of carriers in silicon combined with a high aspect ratio to provide an effective method of controlling current. To reduce the operating voltage, and likewise the energy spread of the emitted electrons, we created vertical ungated …

    mit Repository record for Feature scaling of large, ballasted, field emission arrays (opens in a new tab)

  5. Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design

    Recent advances in nanometer CMOS scaling technology have made transistors capable of operating at hundreds of gigahertz, and opened a new era of high performance, low cost system-on-chip (SOC) designs for multi-gigabit-per-second wireless communication. However, such achievements also bring new …

    uiuc Repository record for Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design (opens in a new tab)

  6. Highly scaled silicon field emitter arrays with integrated silicon nanowire current limiters

    … limits current and improves reliability through velocity saturation and the pinch-off of majority carriers. The 2-[mu]m thick SiO₂ insulator between the gate and the substrate and the conformal dielectric matrix that embeds the nanowire current limiters prevents charge injection and minimizes the …

    mit Repository record for Highly scaled silicon field emitter arrays with integrated silicon nanowire current limiters (opens in a new tab)

  7. Thruster Fault Diagnosis and Accommodation for Overactuated Open-Frame Underwater Vehicles

    … is developed in order to visualise thruster velocity saturation bounds. The PDAS provides a dynamic update of saturation bounds using a complex three-dimensional visualisation of the feasible region (attainable command set), such that the ROV pilot is informed with the effects of thruster …

    southwales Repository record for Thruster Fault Diagnosis and Accommodation for Overactuated Open-Frame Underwater Vehicles (opens in a new tab)

  8. Charge transport and breakdown physics in liquid/solid insulation systems

    … of liquid dielectric molecules and electron velocity saturation, which make the modeling results more realistic. In addition to improving the understanding of electrical breakdown physics in liquid-based insulation systems, a significant effort is made throughout this thesis research to …

    mit Repository record for Charge transport and breakdown physics in liquid/solid insulation systems (opens in a new tab)

  9. Substrate-dependent high-field transport and self-heating in graphene transistors

    … and symmetrical carrier mobility, and high drift velocity compared to silicon. However, when graphene is placed on insulating substrates such as SiO2 or flexible plastics, its inherent superior qualities get suppressed by the influence of the underlying substrate. Interfaces and substrate material …

    uiuc Repository record for Substrate-dependent high-field transport and self-heating in graphene transistors (opens in a new tab)