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Showing 1 to 5 of 5 for “"vapor-liquid-solid (VLS) growth"”.

  1. Vapor-liquid-solid (VLS) growth of lead chalcogenide thin films for infrared sensing applications

    … modest cooling requirements. Adapting the vapour-liquid-solid (VLS) growth mechanism traditionally used for growing nanowires to growing PbSe thin films circumvents the very slow adsorption of a gas phase into a solid surface by introducing a catalytic liquid alloy phase, while simultaneously …

    mit Repository record for Vapor-liquid-solid (VLS) growth of lead chalcogenide thin films for infrared sensing applications (opens in a new tab)

  2. Quantitative Fracture Strength of Lithiated Tin Oxide Nanowires by In-Situ SEM Tensile Experiments

    … The SnO2 nanowires were synthesized using the vapor-liquid-solid (VLS) growth mechanism on stainless steel substrates using a gold (Au) catalyst. Ex-situ lithiation of the SnO2 nanowires was performed directly using the stainless steel growth substrates by the electrochemical half-cell method …

    rice Repository record for Quantitative Fracture Strength of Lithiated Tin Oxide Nanowires by In-Situ SEM Tensile Experiments (opens in a new tab)

  3. Fundamental studies on surface chemistry and interfacial interactions of nanoscale heterostructures for chemical sensing, photocatalysis, and thermal transport management

    … surface chemistry: fabrication (Chemical Vapor Deposition or CVD) and controlled patterning of graphene encapsulated gold nanoparticles (referred as graphene nanoparticles or GNPs) on silicon substrate and their surface functionalization with DNA, external nanoparticles, or semiconducting …

    alabama Repository record for Fundamental studies on surface chemistry and interfacial interactions of nanoscale heterostructures for chemical sensing, photocatalysis, and thermal transport management (opens in a new tab)

  4. Selective lateral nano-epitaxy for manufacturable nanowire electronics

    … dissertation provides a comprehensive study on vapor-liquid-solid (VLS) growth of III-V planar nanowires and their electronic device applications. III-V materials, especially high-In-content InGaAs, are considered as a very promising n-channel material candidate for post-Si complementary …

    uiuc Repository record for Selective lateral nano-epitaxy for manufacturable nanowire electronics (opens in a new tab)

  5. Structure/processing relationships in vapor-liquid-solid nanowire epitaxy

    The synthesis of Si and III-V nanowires using the vapor-liquid-solid (VLS) growth mechanism and low-cost Si substrates was investigated. The VLS mechanism allows fabrication of heterostructures which are not readily attainable using traditional thin-film metalorganic chemical vapor deposition …

    mit Repository record for Structure/processing relationships in vapor-liquid-solid nanowire epitaxy (opens in a new tab)